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IPD60R460CEATMA1

IPD60R460CEATMA1
Mfr. #:
IPD60R460CEATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 600V 9.1A DPAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
IPD60R460CEATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
9.1 A
Rds On - Drain-Source Resistance:
460 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
28 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
74 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
9 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
70 ns
Typical Turn-On Delay Time:
11 ns
Part # Aliases:
IPD60R460CEATMA1 SP001276024
Unit Weight:
0.139332 oz
Tags
IPD60R460CEAT, IPD60R460CEA, IPD60R46, IPD60R4, IPD60R, IPD60, IPD6, IPD
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 9.1A 3-Pin(2+Tab) DPAK T/R
***et
Trans MOSFET N-CH 650V 9.1A 3-Pin TO-252 T/R
Part # Mfg. Description Stock Price
IPD60R460CEATMA1
DISTI # IPD60R460CEATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V TO-252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD60R460CEATMA1
    DISTI # IPD60R460CEATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 600V TO-252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPD60R460CEATMA1
      DISTI # IPD60R460CEATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 600V TO-252-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPD60R460CEATMA1
        DISTI # IPD60R460CEATMA1        		Infineon Technologies AGTrans MOSFET N-CH 650V 9.1A 3-Pin TO-252 T/R - Bulk (Alt: IPD60R460CEATMA1)
        Min Qty: 1000
        Container: Bulk        		Americas - 0
        • 10000:$0.3169
        • 5000:$0.3229
        • 3000:$0.3339
        • 2000:$0.3469
        • 1000:$0.3599
        IPD60R460CEATMA1Infineon Technologies AGIPD60R460CE Series 600 V 460 mOhm CoolMOS CE Power Transistor - TO-252-3
        RoHS: Not Compliant        		20Cut Tape/Mini-Reel
        • 1500:$0.3250
        IPD60R460CEATMA1
        DISTI # 726-IPD60R460CEATMA1        		Infineon Technologies AGMOSFET N-Ch 600V 9.1A DPAK-2
        RoHS: Compliant        		746
        • 1:$0.9200
        • 10:$0.7780
        • 100:$0.5980
        • 500:$0.5290
        • 1000:$0.4170
        IPD60R460CEATMA1Infineon Technologies AGPower Field-Effect Transistor, 600V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
        RoHS: Not Compliant        		800
        • 1000:$0.3300
        • 500:$0.3500
        • 100:$0.3600
        • 25:$0.3800
        • 1:$0.4100
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        Availability
        Stock:
        734
        On Order:
        2717
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        Current price of IPD60R460CEATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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