PartNumber | IPD60N10S412ATMA1 | IPD600N25N3GATMA1 | IPD600N25N3GBTMA1 |
Description | MOSFET N-CHANNEL 100+ | MOSFET MV POWER MOS | MOSFET N-CH 250V 25A TO252-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | 250 V | - |
Configuration | Single | Single | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | IPD60N10S4-12 SP001102936 | G IPD600N25N3 SP001127834 | - |
Unit Weight | 0.139332 oz | 0.019401 oz | - |
RoHS | - | Y | - |
Id Continuous Drain Current | - | 25 A | - |
Rds On Drain Source Resistance | - | 60 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Vgs Gate Source Voltage | - | 10 V | - |
Qg Gate Charge | - | 22 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 136 W | - |
Channel Mode | - | Enhancement | - |
Tradename | - | OptiMOS | - |
Series | - | OptiMOS 3 | - |
Forward Transconductance Min | - | 24 S | - |
Fall Time | - | 8 ns | - |
Rise Time | - | 10 ns | - |
Typical Turn Off Delay Time | - | 22 ns | - |
Typical Turn On Delay Time | - | 10 ns | - |