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IPD60R180P7ATMA1

IPD60R180P7ATMA1
Mfr. #:
IPD60R180P7ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IPD60R180P7ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPD60R180P7ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
18 A
Rds On - Drain-Source Resistance:
145 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
25 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
72 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Series:
CoolMOS P7
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
12 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
85 ns
Typical Turn-On Delay Time:
14 ns
Part # Aliases:
IPD60R180P7 SP001606052
Unit Weight:
0.011993 oz
Tags
IPD60R180P, IPD60R18, IPD60R1, IPD60R, IPD60, IPD6, IPD
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Transistor MOSFET N-CH 600V 18A 3-Pin TO-252 T/R - Tape and Reel
***ure Electronics
Single N-Channel 600 V 180 mOhm 25 nC CoolMOS™ Power Mosfet - DPAK
*** Stop Electro
Power Field-Effect Transistor, 18A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N-CH, 600V, 18A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.145ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 72W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS P7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Part # Mfg. Description Stock Price
IPD60R180P7ATMA1
DISTI # V72:2272_17072160		Infineon Technologies AGTrans MOSFET N-CH 600V 18A 3-Pin(2+Tab) DPAK T/R2320
  • 1000:$1.3221
  • 500:$1.3362
  • 250:$1.5157
  • 100:$1.5626
  • 25:$1.9144
  • 10:$1.9872
  • 1:$2.6000
IPD60R180P7ATMA1
DISTI # V36:1790_17072160		Infineon Technologies AGTrans MOSFET N-CH 600V 18A 3-Pin(2+Tab) DPAK T/R0
    IPD60R180P7ATMA1
    DISTI # IPD60R180P7ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 650V 18A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		On Order
    • 5000:$1.1295
    • 2500:$1.1436
    IPD60R180P7ATMA1
    DISTI # IPD60R180P7ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 650V 18A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$1.2652
    • 500:$1.5270
    • 100:$1.8585
    • 10:$2.3120
    • 1:$2.5700
    IPD60R180P7ATMA1
    DISTI # IPD60R180P7ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 650V 18A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$1.2652
    • 500:$1.5270
    • 100:$1.8585
    • 10:$2.3120
    • 1:$2.5700
    IPD60R180P7ATMA1
    DISTI # 32334069    		Infineon Technologies AGTrans MOSFET N-CH 600V 18A 3-Pin(2+Tab) DPAK T/R2500
    • 2500:$1.0791
    IPD60R180P7ATMA1
    DISTI # 33635180    		Infineon Technologies AGTrans MOSFET N-CH 600V 18A 3-Pin(2+Tab) DPAK T/R2320
    • 1000:$1.3221
    • 500:$1.3362
    • 250:$1.5137
    • 100:$1.5626
    • 25:$1.9133
    • 10:$1.9876
    • 6:$2.6000
    IPD60R180P7ATMA1
    DISTI # IPD60R180P7ATMA1    		Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPD60R180P7ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$1.0249
    • 15000:$1.0429
    • 10000:$1.0799
    • 5000:$1.1199
    • 2500:$1.1619
    IPD60R180P7ATMA1
    DISTI # 43AC3271    		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.145ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes0
    • 1000:$1.1800
    • 500:$1.4200
    • 250:$1.5300
    • 100:$1.6300
    • 50:$1.7600
    • 25:$1.9000
    • 10:$2.0300
    • 1:$2.3900
    IPD60R180P7ATMA1
    DISTI # 726-IPD60R180P7ATMA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		9859
    • 1:$2.3700
    • 10:$2.0100
    • 100:$1.6100
    • 500:$1.4100
    • 1000:$1.1700
    • 2500:$1.0900
    • 5000:$1.0400
    IPD60R180P7ATMA1
    DISTI # 2803395    		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-252-3
    RoHS: Compliant    		0
    • 1000:$1.6200
    • 500:$1.6500
    • 250:$1.7400
    • 100:$1.8400
    • 10:$2.0800
    • 1:$2.2300
    IPD60R180P7ATMA1
    DISTI # 2803395    		Infineon Technologies AGMOSFET, N-CH, 600V, 18A, TO-252-3188
    • 100:£1.5800
    • 10:£1.9700
    • 1:£2.6300
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    Availability
    Stock:
    Available
    On Order:
    1992
    Enter Quantity:
    Current price of IPD60R180P7ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.37
    $2.37
    10
    $2.01
    $20.10
    100
    $1.61
    $161.00
    500
    $1.41
    $705.00
    1000
    $1.17
    $1 170.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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