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IRF6609TR1

IRF6609TR1
Mfr. #:
IRF6609TR1
Manufacturer:
Infineon / IR
Description:
MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF6609TR1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6609TR1 DatasheetIRF6609TR1 Datasheet (P4-P6)IRF6609TR1 Datasheet (P7-P9)IRF6609TR1 Datasheet (P10-P11)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
N
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
DirectFET-MT
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
31 A
Rds On - Drain-Source Resistance:
2.6 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
46 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
89 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
0.7 mm
Length:
6.35 mm
Transistor Type:
1 N-Channel
Type:
HEXFET Power MOSFET
Width:
5.05 mm
Brand:
Infineon / IR
Fall Time:
9.8 ns
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
95 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
26 ns
Typical Turn-On Delay Time:
24 ns
Part # Aliases:
SP001529252
Unit Weight:
0.035274 oz
Tags
IRF6609TR1, IRF6609T, IRF6609, IRF660, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power; N-Channel; 1.6 Miliohms (Typ.); 20 V (Min.); 250 A (Max.)
***ark
MOSFET, N, DIRECTFET, MT; Transistor type:MOSFET; Voltage, Vds typ:20V; Current, Id cont:150A; Resistance, Rds on:2mohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:2.45V; Case style:MT; Capacitance, Ciss typ:6290pF; RoHS Compliant: Yes
***ernational Rectifier
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in
***ment14 APAC
MOSFET, N, DIRECTFET, MT; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:20V; On Resistance Rds(on):2mohm; Threshold Voltage Vgs Typ:2.45V; Power Dissipation Pd:2.8W; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:6290pF; Charge Qrr @ Tj = 25°C Typ:26nC; Current Temperature:25°C; External Depth:6.35mm; External Length / Height:0.7mm; External Width:5.05mm; Full Power Rating Temperature:25°C; IC Package (Case style):MT; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; No. of Transistors:1; On State Resistance Max:2mohm; Package / Case:MT; Power Dissipation Pd:2.8W; Power Dissipation Pd:2.8W; Pulse Current Idm:250A; Reverse Recovery Time trr Typ:32ns; SMD Marking:6609; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.45V; Voltage Vgs th Min:1.55V
Part # Mfg. Description Stock Price
IRF6609TR1
DISTI # IRF6609TR1-ND		Infineon Technologies AGMOSFET N-CH 20V 31A DIRECTFET
RoHS: Not compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6609TR1PBF
    DISTI # IRF6609TR1PBFTR-ND    		Infineon Technologies AGMOSFET N-CH 20V 31A DIRECTFET
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Limited Supply - Call
      IRF6609TR1PBF
      DISTI # IRF6609TR1PBFCT-ND      		Infineon Technologies AGMOSFET N-CH 20V 31A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		Limited Supply - Call
        IRF6609TR1PBF
        DISTI # IRF6609TR1PBFDKR-ND        		Infineon Technologies AGMOSFET N-CH 20V 31A DIRECTFET
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®        		Limited Supply - Call
          IRF6609TR1PBF
          DISTI # 70018820          		Infineon Technologies AG20V N-CHANNEL HEXFET POWER MOSFET
          RoHS: Compliant          		0
          • 1000:$2.4300
          • 2000:$2.2300
          IRF6609TR1
          DISTI # 942-IRF6609TR1          		Infineon Technologies AGMOSFET 20V N-CH 2.0 mOhm HEXFET 46nC
          RoHS: Not compliant          		0
            IRF6609TR1PBF
            DISTI # 942-IRF6609TR1PBF            		Infineon Technologies AGMOSFET 20V N-CH HEXFET 2mOhms 46nC
            RoHS: Compliant            		0
              IRF6609TR1
              DISTI # 9266569              		Infineon Technologies AGMOSFET, N, DIRECTFET, MT
              RoHS: Compliant              		0
              • 1:$4.6600
              IRF6609TR1PBF
              DISTI # 1436905              		Infineon Technologies AG 
              RoHS: Compliant              		0
              • 1:$4.6500
              • 10:$4.3600
              • 25:$3.9500
              • 50:$3.8100
              • 100:$3.6100
              • 250:$3.6100
              • 500:$3.4900
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              Availability
              Stock:
              Available
              On Order:
              5500
              Enter Quantity:
              Current price of IRF6609TR1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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