IRF6644TRPBF

IRF6644TRPBF
Mfr. #:
IRF6644TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs
Lifecycle:
New from this manufacturer.
Datasheet:
IRF6644TRPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
DirectFET-MN
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
10.3 A
Rds On - Drain-Source Resistance:
10.3 mOhms
Vgs th - Gate-Source Threshold Voltage:
4.8 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
35 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
89 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
DirectFET
Packaging:
Reel
Height:
0.7 mm
Length:
6.35 mm
Transistor Type:
1 N-Channel
Width:
5.05 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
15 S
Fall Time:
16 ns
Product Type:
MOSFET
Rise Time:
26 ns
Factory Pack Quantity:
4800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
34 ns
Typical Turn-On Delay Time:
17 ns
Part # Aliases:
SP001563476
Unit Weight:
0.003071 oz
Tags
IRF6644T, IRF6644, IRF664, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 13 mOhm 47 nC HEXFET® Power Mosfet - DirectFET®
***ineon
Target Applications: AC-DC; Battery Operated Drive; Class D Audio; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side
***ment14 APAC
N MOSFET, 100V, 8.3A, DIRECTFET MN; Tran; N MOSFET, 100V, 8.3A, DIRECTFET MN; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.8V
***ernational Rectifier
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 60 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N-CH, 100V, 60A, DIRECTFET MN; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0103ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.8V; Power Dissipation Pd: 89W; Transistor Case Style: DirectFET MN; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Single N-Channel 80 V 9.5 mOhm 50 nC HEXFET® Power Mosfet - DirectFET®
***ineon
Target Applications: AC-DC; Battery Operated Drive; Class D Audio; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:80V; Continuous Drain Current, Id:9.6A; On Resistance, Rds(on):9.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MN ;RoHS Compliant: Yes
***ernational Rectifier
A 80V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 68 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N-CH, 80V, 68A, DIRECTFET MN; Transistor Polarity: N Channel; Continuous Drain Current Id: 68A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0076ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipation Pd: 89W; Transistor Case Style: DirectFET MN; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Single N-Channel 100 V 39 mOhm 37 nC HEXFET® Power Mosfet - DPAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***roFlash
Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N-CH, 100V, 31A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 31A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Single N-Channel 100 V 33 mOhm 25 nC OptiMOS™ Power Mosfet - TDSON-8
***p One Stop
Trans MOSFET N-CH 100V 8.8A Automotive 8-Pin TDSON EP T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 100V, 42A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0139ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:60W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***i-Key
MOSFET N-CH 100V 28A D2PAK
***eco
N-CH/100V/28A/0.052OHM
***ser
MOSFETs 100V N-Channel A-FET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:28A; On Resistance, Rds(on):52mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
***ark
Mosfet Transistor, N Channel, 37.5 A, 75 V, 0.009 Ohm, 15 V, 2.5 V Rohs Compliant: Yes
***icroelectronics
N-Channel 75V - 0.009Ohm - 75A - D2PAK StripFET(TM) II POWER MOSFET
***ical
Trans MOSFET N-CH 75V 75A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 75 V 0.011 Ohm Surface Mount STripFET™ II Power MosFet - D2PAK
***r Electronics
Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 75V, 75A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 37.5A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 15V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 75A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 75V; Voltage Vgs Max: 2.5V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-channel 100 V, 0.23 Ohm, 2.4 A STripFET(TM) II POWER MOSFET in SOT-223 package
*** Source Electronics
MOSFET N-CH 100V 2.4A SOT-223 / Trans MOSFET N-CH 100V 2.4A 4-Pin(3+Tab) SOT-223 T/R
***ark
N CHANNEL MOSFET, 100V, 2A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***nell
MOSFET, N, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 2A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.23ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 2A; On State resistance @ Vgs = 10V: 260mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 8A; SMD Marking: STN2NF10; Voltage Vds Typ: 100V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V
Part # Mfg. Description Stock Price
IRF6644TRPBF
DISTI # V72:2272_13890355
Infineon Technologies AGTrans MOSFET N-CH Si 100V 10.3A 7-Pin Direct-FET MN T/R
RoHS: Compliant
1221
  • 1000:$1.0225
  • 500:$1.2084
  • 250:$1.3284
  • 100:$1.3755
  • 25:$1.6664
  • 10:$1.6857
  • 1:$1.9347
IRF6644TRPBF
DISTI # IRF6644TRPBFCT-ND
Infineon Technologies AGMOSFET N-CH 100V 10.3A DIRECTFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6761In Stock
  • 1000:$1.2650
  • 500:$1.5267
  • 100:$1.9629
  • 10:$2.4430
  • 1:$2.7000
IRF6644TRPBF
DISTI # IRF6644TRPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 100V 10.3A DIRECTFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6761In Stock
  • 1000:$1.2650
  • 500:$1.5267
  • 100:$1.9629
  • 10:$2.4430
  • 1:$2.7000
IRF6644TRPBF
DISTI # IRF6644TRPBFTR-ND
Infineon Technologies AGMOSFET N-CH 100V 10.3A DIRECTFET
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)
4800In Stock
  • 4800:$1.1011
IRF6644TRPBF
DISTI # 30608001
Infineon Technologies AGTrans MOSFET N-CH Si 100V 10.3A 7-Pin Direct-FET MN T/R
RoHS: Compliant
4800
  • 500:$1.4280
  • 100:$1.5682
  • 50:$1.7723
  • 10:$2.1037
  • 7:$3.8505
IRF6644TRPBF
DISTI # 31307034
Infineon Technologies AGTrans MOSFET N-CH Si 100V 10.3A 7-Pin Direct-FET MN T/R
RoHS: Compliant
4800
  • 4800:$1.1051
IRF6644TRPBF
DISTI # 30208566
Infineon Technologies AGTrans MOSFET N-CH Si 100V 10.3A 7-Pin Direct-FET MN T/R
RoHS: Compliant
1221
  • 6:$0.9197
IRF6644TRPBF
DISTI # 30726674
Infineon Technologies AGTrans MOSFET N-CH Si 100V 10.3A 7-Pin Direct-FET MN T/R
RoHS: Compliant
87
  • 11:$1.1740
IRF6644TRPBF-EL
DISTI # IRF6644TRPBF
Infineon Technologies AGTrans MOSFET N-CH 100V 10.3A 7-Pin Direct-FET MN T/R 4.8k Pb free EL (Alt: IRF6644TRPBF)
RoHS: Compliant
Min Qty: 4800
Container: Tape and Reel
Asia - 0
    IRF6644TRPBF-EL
    DISTI # IRF6644TRPBF
    Infineon Technologies AGTrans MOSFET N-CH 100V 10.3A 7-Pin Direct-FET MN T/R 4.8k Pb free EL - Tape and Reel (Alt: IRF6644TRPBF)
    RoHS: Compliant
    Min Qty: 4800
    Container: Reel
    Americas - 0
    • 4800:$0.9889
    • 9600:$0.9869
    • 19200:$0.9839
    • 28800:$0.9819
    • 48000:$0.9789
    IRF6644TRPBF
    DISTI # 91Y4742
    Infineon Technologies AGMOSFET, N-CH, 100V, 60A, DIRECTFET MN,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0103ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.8V,Power RoHS Compliant: Yes3775
    • 1:$2.2700
    • 10:$1.9300
    • 25:$1.8000
    • 50:$1.6700
    • 100:$1.5400
    • 250:$1.4500
    • 500:$1.3500
    • 1000:$1.1200
    IRF6644TRPBF
    DISTI # 70019581
    Infineon Technologies AGMOSFET,100V,60A,13 MOHM,35 NC QG,MED CAN
    RoHS: Compliant
    0
    • 2:$4.7000
    • 4800:$4.7000
    IRF6644TRPBFInfineon Technologies AGSingle N-Channel 100 V 13 mOhm 47 nC HEXFET Power Mosfet - DirectFET
    RoHS: Compliant
    4800Reel
    • 4800:$1.1800
    IRF6644TRPBF
    DISTI # 942-IRF6644TRPBF
    Infineon Technologies AGMOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs
    RoHS: Compliant
    10606
    • 1:$2.2700
    • 10:$1.9300
    • 100:$1.5400
    • 500:$1.3500
    • 1000:$1.1200
    • 2500:$1.0400
    • 4800:$1.0100
    IRF6644TRPBFInternational Rectifier 721
    • 611:$2.9790
    • 273:$3.2769
    • 1:$5.9580
    IRF6644TRPBFInternational Rectifier 
    RoHS: Compliant
    Europe - 895
      IRF6644TRPBF
      DISTI # C1S322000482179
      Infineon Technologies AGMOSFETs2021
      • 4800:$1.4200
      IRF6644TRPBF
      DISTI # C1S322000482160
      Infineon Technologies AGMOSFETs1221
      • 100:$1.4060
      • 50:$1.6859
      • 25:$1.6922
      • 10:$1.6985
      IRF6644TRPBF
      DISTI # C1S322000482188
      Infineon Technologies AGMOSFETs4800
      • 2000:$1.0700
      • 500:$1.1200
      • 100:$1.1700
      • 50:$1.2300
      • 10:$1.4900
      • 1:$3.0800
      IRF6644TRPBF
      DISTI # 2579984
      Infineon Technologies AGMOSFET, N-CH, 100V, 60A, DIRECTFET MN
      RoHS: Compliant
      3771
      • 1:$4.3100
      • 10:$3.9000
      • 100:$3.1300
      IRF6644TRPBF
      DISTI # 2579984
      Infineon Technologies AGMOSFET, N-CH, 100V, 60A, DIRECTFET MN
      RoHS: Compliant
      4281
      • 1:£2.1900
      • 10:£1.5700
      • 100:£1.2400
      • 250:£1.1700
      • 500:£1.0800
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      Availability
      Stock:
      13
      On Order:
      1996
      Enter Quantity:
      Current price of IRF6644TRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.26
      $2.26
      10
      $1.92
      $19.20
      100
      $1.54
      $154.00
      500
      $1.34
      $670.00
      1000
      $1.11
      $1 110.00
      2500
      $1.04
      $2 600.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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