PartNumber | IRF6641TRPBF | IRF6643TRPBF | IRF6641TR1PBF |
Description | MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC | MOSFET 150V 1 N-CH HEXFET 34.5mOhms 39nC | MOSFET MOSFT 200V 26A 60mOhm 34nC Qg |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | DirectFET-MZ | DirectFET-MZ | DirectFET-MZ |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | 150 V | 200 V |
Id Continuous Drain Current | 4.6 A | 6.2 A | 4.6 A |
Rds On Drain Source Resistance | 51 mOhms | 29 mOhms | 51 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 34 nC | 39 nC | 34 nC |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 89 W | 89 W | 89 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Tradename | DirectFET | DirectFET | - |
Packaging | Reel | Reel | Reel |
Height | 0.7 mm | 0.7 mm | 0.7 mm |
Length | 6.35 mm | 6.35 mm | 6.35 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.05 mm | 5.05 mm | 5.05 mm |
Brand | Infineon / IR | Infineon / IR | Infineon / IR |
Fall Time | 6.5 ns | 4.4 ns | 6.5 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 11 ns | 5 ns | 11 ns |
Factory Pack Quantity | 4800 | 4800 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 31 ns | 13 ns | - |
Typical Turn On Delay Time | 16 ns | 9.2 ns | - |
Part # Aliases | SP001559700 | SP001570070 | SP001563484 |
Vgs th Gate Source Threshold Voltage | - | 4 V | 4.9 V |
Forward Transconductance Min | - | 16 S | 13 S |
Moisture Sensitive | - | Yes | Yes |
Unit Weight | - | - | 0.008713 oz |