IRF6641TRPBF

Mfr. #:: IRF6641TRPBF
Manufacturer:: Infineon / IR
Description:: MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF6641TRPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF6641TRPBF Datasheet IRF6641TRPBF Datasheet (P4-P6)IRF6641TRPBF Datasheet (P7-P9)IRF6641TRPBF Datasheet (P10)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: DirectFET-MZ

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 200 V

Id - Continuous Drain Current:: 4.6 A

Rds On - Drain-Source Resistance:: 51 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 34 nC

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 89 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: DirectFET

Packaging:: Reel

Height:: 0.7 mm

Length:: 6.35 mm

Transistor Type:: 1 N-Channel

Width:: 5.05 mm

Brand:: Infineon / IR

Fall Time:: 6.5 ns

Product Type:: MOSFET

Rise Time:: 11 ns

Factory Pack Quantity:: 4800

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 31 ns

Typical Turn-On Delay Time:: 16 ns

Part # Aliases:: SP001559700

Tags: IRF6641, IRF664, IRF66, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6641TRPBF Description

***ure Electronics: Single N-Channel 200 V 0.051 Ohm 48 nC HEXFET® Power Mosfet - DirectFET®

***ineon: Target Applications: Battery Operated Drive; Class D Audio; Load Switch High Side

***ical: Trans MOSFET N-CH Si 200V 4.6A 7-Pin Direct-FET MZ T/R

***ernational Rectifier: A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 26 amperes optimized with low on resistance for applications such as active ORýing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

Market price

Part #	Mfg.	Description	Stock	Price
IRF6641TRPBF DISTI # V72:2272_13890347	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 4.6A 7-Pin Direct-FET MZ T/R	4800	3000:$1.3270 1000:$1.3940 500:$1.6259 250:$1.7960 100:$1.8940 25:$2.1460 10:$2.1710 1:$2.4939
IRF6641TRPBF DISTI # IRF6641TRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 200V 4.6A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6641TRPBF DISTI # IRF6641TRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 200V 4.6A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6641TRPBF DISTI # IRF6641TRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 200V 4.6A DIRECTFET RoHS: Compliant Min Qty: 4800 Container: Tape & Reel (TR)	Temporarily Out of Stock	4800:$1.5488
IRF6641TRPBF DISTI # 29485933	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 4.6A 7-Pin Direct-FET MZ T/R	4800	3000:$1.3270 1000:$1.3940 500:$1.6259 250:$1.7960 100:$1.8940 25:$2.1460 10:$2.1710 5:$2.4939
IRF6641TRPBF DISTI # 30702488	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 4.6A 7-Pin Direct-FET MZ T/R	4800	4800:$1.4112
IRF6641TRPBF DISTI # IRF6641TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 4.6A 7-Pin Direct-FET MZ T/R - Tape and Reel (Alt: IRF6641TRPBF) RoHS: Compliant Min Qty: 4800 Container: Reel	Americas - 0	4800:$1.3900 9600:$1.3900 19200:$1.3900 28800:$1.3900 48000:$1.3900
IRF6641TRPBF. DISTI # 32AC0753	Infineon Technologies AG	TRENCH_MOSFETS ROHS COMPLIANT: YES	0	1:$1.3900
IRF6641TRPBF DISTI # 70019579	Infineon Technologies AG	MOSFET,200V,26A,60 MOHM,34 NC QG,MED CAN RoHS: Compliant	0	4800:$1.8610 9600:$1.8240 24000:$1.7680
IRF6641TRPBF	Infineon Technologies AG	Power Field-Effect Transistor, 4.6A I(D), 200V, 0.0599ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	4800	1000:$1.4500 500:$1.5200 100:$1.5900 25:$1.6500 1:$1.7800
IRF6641TRPBF	International Rectifier	Power Field-Effect Transistor, 4.6A I(D), 200V, 0.0599ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	4800	1000:$1.4500 500:$1.5200 100:$1.5900 25:$1.6500 1:$1.7800
IRF6641TRPBF DISTI # 942-IRF6641TRPBF	Infineon Technologies AG	MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC RoHS: Compliant	3923	1:$2.9200 10:$2.4800 100:$2.1500 250:$2.0400 500:$1.8300 1000:$1.5400 2500:$1.4700
IRF6641TRPBF DISTI # C1S322000700482	Infineon Technologies AG	MOSFETs RoHS: Compliant	4800	250:$1.7960 100:$1.8940 25:$2.1460 10:$2.1710 1:$2.4939
IRF6641TRPBF DISTI # C1S322000579581	Infineon Technologies AG	MOSFETs RoHS: Compliant	4800	4800:$1.5600

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Availability

Stock:: Available
On Order:: 1986
Enter Quantity:

Current price of IRF6641TRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$2.91~~; ~~$2.91~~

10: ~~$2.47~~; ~~$24.70~~

100: ~~$2.14~~; ~~$214.00~~

250: ~~$2.03~~; ~~$507.50~~

500: ~~$1.82~~; ~~$910.00~~

1000: ~~$1.54~~; ~~$1 540.00~~

2500: ~~$1.46~~; ~~$3 650.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRF6641TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes