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| PartNumber | IRF6641TRPBF | IRF6641TR1PBF | IRF6641PBF |
| Description | MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC | MOSFET MOSFT 200V 26A 60mOhm 34nC Qg | |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | IC Chips |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | DirectFET-MZ | DirectFET-MZ | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
| Id Continuous Drain Current | 4.6 A | 4.6 A | - |
| Rds On Drain Source Resistance | 51 mOhms | 51 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 34 nC | 34 nC | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 89 W | 89 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DirectFET | - | - |
| Packaging | Reel | Reel | - |
| Height | 0.7 mm | 0.7 mm | - |
| Length | 6.35 mm | 6.35 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.05 mm | 5.05 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Fall Time | 6.5 ns | 6.5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns | 11 ns | - |
| Factory Pack Quantity | 4800 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 31 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Part # Aliases | SP001559700 | SP001563484 | - |
| Vgs th Gate Source Threshold Voltage | - | 4.9 V | - |
| Forward Transconductance Min | - | 13 S | - |
| Moisture Sensitive | - | Yes | - |
| Unit Weight | - | 0.008713 oz | - |