IRF6648TR1

Mfr. #:: IRF6648TR1
Manufacturer:: Infineon / IR
Description:: MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF6648TR1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF6648TR1 Datasheet IRF6648TR1 Datasheet (P4-P6)IRF6648TR1 Datasheet (P7-P9)IRF6648TR1 Datasheet (P10)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: N

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: DirectFET-MN

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 86 A

Rds On - Drain-Source Resistance:: 7 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 36 nC

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2.8 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 0.7 mm

Length:: 6.35 mm

Transistor Type:: 1 N-Channel

Type:: DirectFet Power MOSFET

Width:: 5.05 mm

Brand:: Infineon / IR

Fall Time:: 13 ns

Moisture Sensitive:: Yes

Product Type:: MOSFET

Rise Time:: 29 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 28 ns

Typical Turn-On Delay Time:: 16 ns

Part # Aliases:: SP001571492

Unit Weight:: 0.017637 oz

Tags: IRF6648TR1, IRF6648, IRF664, IRF66, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6648TR1 Description

***ical: Trans MOSFET N-CH 60V 86A 7-Pin Direct-FET MN T/R

***ment14 APAC: MOSFET, DIRECTFET, MN; Transistor Polarity:N Channel; Continuous Drain Current Id:86A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET; No. of Pins:7; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:2120pF; Current Id Max:86A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MN; Power Dissipation Pd:2.8W; Power Dissipation Pd:2.8W; Pulse Current Idm:260A; Reverse Recovery Time trr Typ:31ns; SMD Marking:6648; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ernational Rectifier: A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 86 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***trelec: MOSFET Operating temperature: -55...+150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 100 W

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

***ernational Rectifier: 60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package

***(Formerly Allied Electronics): MOSFET, 60V, 87A, 7mOhm, 40 nC Qg, PQFN5x6

***et Europe: Trans MOSFET N-CH 60V 16A 8-Pin QFN T/R

***trelec: MOSFET PQFN-8 (5x6) N 60V 16 A

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT

***ment14 APAC: MOSFET,N CH,60V,16A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:100W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:89A; Power Dissipation Pd:100W; Voltage Vgs Max:20V

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***trelec: Power FET Operating temperature: -55...+150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 114 W

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ment14 APAC: MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W

***ure Electronics: N-Channel 60 V 7 mOhm Surface Mount PowerTrench Mosfet D2PAK-3

***emi: N-Channel PowerTrench® MOSFET 60V, 80A, 7mΩ

***Yang: Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:175W; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-263; Power Dissipation Pd:175W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 55V - 6.5mOhm - 65A - DPAK STripFET (TM) ; Power MOSFET

***ure Electronics: N-Channel 55 V 8.5 mOhm Surface Mount STripFET Power MosFet - TO-252

***ment14 APAC: MOSFET, N CH, 55V, 80A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Source Voltage Vds:55V; On Resistance

***nell: MOSFET, N CH, 55V, 80A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 6.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 80A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 55V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

***icroelectronics: N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in D2PAK package

***ical: Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R

***ark: MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:80A; Resistance, Rds On:0.0085ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination ;RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 80A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 80A; On State resistance @ Vgs = 10V: 8.5mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 320A; SMD Marking: 60N55F3; Termination Type: Surface Mount Device; Voltage Vds Typ: 55V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

Market price

Part #	Mfg.	Description	Stock	Price
IRF6648TR1 DISTI # IRF6648TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 86A DIRECTFET RoHS: Not compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6648TR1 DISTI # IRF6648CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 86A DIRECTFET RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6648TR1PBF DISTI # IRF6648TR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 60V 86A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6648TR1PBF DISTI # IRF6648TR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 60V 86A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6648TR1PBF DISTI # IRF6648TR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 86A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6648TR1PBF DISTI # 70018848	Infineon Technologies AG	60V SINGLE N-CHANNEL HEXFET POWER MOSFET,DIRECTFET MN PKG RoHS: Compliant	0	1000:$2.3900 2000:$2.1900
IRF6648TR1 DISTI # 942-IRF6648TR1	Infineon Technologies AG	MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC RoHS: Not compliant	0
IRF6648TR1PBF DISTI # 942-IRF6648TR1PBF	Infineon Technologies AG	MOSFET MOSFT 60V 86A 7.0mOhm 36nC Qg RoHS: Compliant	0
IRF6648TR1PBF	International Rectifier		15	12:$1.3500 3:$1.8000 1:$2.2500
IRF6648TR1PBF	International Rectifier		336
IRF6648TR1PBF	International Rectifier	RoHS: Compliant	Europe - 11164
IRF6648TR1 DISTI # 1084634	Infineon Technologies AG	MOSFET, DIRECTFET, MN RoHS: Compliant	0	1:$4.2000 10:$3.9400 100:$3.5700 250:$3.4400 500:$3.2600 1000:$3.2600

Image	Part #	Description
	Mfr.#: IRF6626TR1PBF OMO.#: OMO-IRF6626TR1PBF	MOSFET 30V N-CH 4.0 mOhm HEXFET 1.8V nC
	Mfr.#: IRF6620TR1 OMO.#: OMO-IRF6620TR1	MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC
	Mfr.#: IRF6638TRPBF OMO.#: OMO-IRF6638TRPBF	MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
	Mfr.#: IRF6612TR1 OMO.#: OMO-IRF6612TR1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 24A DIRECTFET
	Mfr.#: IRF6623 OMO.#: OMO-IRF6623-INFINEON-TECHNOLOGIES	MOSFET N-CH 20V 16A DIRECTFET
	Mfr.#: IRF6633TR1 OMO.#: OMO-IRF6633TR1-INFINEON-TECHNOLOGIES	MOSFET N-CH 20V 16A DIRECTFET-MP
	Mfr.#: IRF6613TR1 OMO.#: OMO-IRF6613TR1-INFINEON-TECHNOLOGIES	MOSFET N-CH 40V 23A DIRECTFET
	Mfr.#: IRF6621-TR1 OMO.#: OMO-IRF6621-TR1-1190	New and Original
	Mfr.#: IRF6612TRPBF OMO.#: OMO-IRF6612TRPBF-INFINEON-TECHNOLOGIES	MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
	Mfr.#: IRF6629TRPBF OMO.#: OMO-IRF6629TRPBF-INFINEON-TECHNOLOGIES	MOSFET 25V 1 N-CH HEXFET 2.1mOhms 34nC

IRF6648TR1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes