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SCT3160KLHRC11

SCT3160KLHRC11
Mfr. #:
SCT3160KLHRC11
Manufacturer:
Rohm Semiconductor
Description:
MOSFET 1200V 17A 103W SIC 160mOhm TO-247N
Lifecycle:
New from this manufacturer.
Datasheet:
SCT3160KLHRC11 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SCT3160KLHRC11 more Information
Product Attribute
Attribute Value
Manufacturer:
ROHM Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
SiC
Mounting Style:
Through Hole
Package / Case:
TO-247N-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1200 V
Id - Continuous Drain Current:
17 A
Rds On - Drain-Source Resistance:
160 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.7 V
Vgs - Gate-Source Voltage:
- 4 V, 22 V
Qg - Gate Charge:
42 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
103 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
SCT3x
Transistor Type:
1 N-Channel
Brand:
ROHM Semiconductor
Forward Transconductance - Min:
2.5 S
Fall Time:
25 ns
Product Type:
MOSFET
Rise Time:
18 ns
Factory Pack Quantity:
30
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns
Typical Turn-On Delay Time:
14 ns
Tags
SCT316, SCT31, SCT3, SCT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
AEC-Q101 SiC Power MOSFETs
ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch mode power supplies. The SiC Power MOSFETs can be used to boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles.
Part # Mfg. Description Stock Price
SCT3160KLHRC11
DISTI # SCT3160KLHRC11-ND		ROHM SemiconductorAUTOMOTIVE GRADE N-CHANNEL SIC P
RoHS: Compliant
Min Qty: 1
Container: Tube		657In Stock
  • 900:$8.6600
  • 450:$9.2572
  • 25:$11.0488
  • 10:$11.5270
  • 1:$12.5400
SCT3160KLHRC11
DISTI # 02AH4689		ROHM SemiconductorMOSFET, N-CH, 1.2KV, 17A, 175DEG C, 103W,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,Power RoHS Compliant: Yes9
  • 500:$7.7200
  • 250:$7.9800
  • 100:$9.0800
  • 50:$9.6400
  • 25:$10.6800
  • 10:$10.9900
  • 1:$11.7500
SCT3160KLHRC11
DISTI # 755-SCT3160KLHRC11		ROHM SemiconductorMOSFET 1200V 17A 103W SIC 160mOhm TO-247N
RoHS: Compliant		450
  • 1:$12.5300
  • 10:$11.5200
  • 25:$11.0500
SCT3160KLHRC11
DISTI # TMOS2745		ROHM SemiconductorSiC N-CH 1200V 17A 160mOhm
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$8.6100
SCT3160KLHRC11
DISTI # 3052192		ROHM SemiconductorMOSFET, N-CH, 1.2KV, 17A, 175DEG C, 103W0
  • 100:£7.7400
  • 50:£8.0900
  • 10:£8.4300
  • 5:£10.0200
  • 1:£10.4700
SCT3160KLHRC11ROHM SemiconductorMOSFET 1200V 17A 103W SIC 160mOhm TO-247N
RoHS: Compliant		Americas -
    SCT3160KLHRC11
    DISTI # 3052192    		ROHM SemiconductorMOSFET, N-CH, 1.2KV, 17A, 175DEG C, 103W
    RoHS: Compliant    		9
    • 10:$13.0200
    • 5:$13.1100
    • 1:$13.9000
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    10M50SCE144I7G

    Mfr.#: 10M50SCE144I7G

    OMO.#: OMO-10M50SCE144I7G-INTEL

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    Availability
    Stock:
    412
    On Order:
    2395
    Enter Quantity:
    Current price of SCT3160KLHRC11 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $12.53
    $12.53
    10
    $11.52
    $115.20
    25
    $11.05
    $276.25
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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