TGF2929-FS

TGF2929-FS
Mfr. #:
TGF2929-FS
Manufacturer:
Qorvo
Description:
RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2929-FS Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
TGF2929-FS more Information
Product Attribute
Attribute Value
Manufacturer
TriQuint (Qorvo)
Product Category
Transistors - FETs, MOSFETs - Single
Type
RF Power MOSFET
Packaging
Tray
Part-Aliases
1123716
Technology
GaN Si
Gain
14 dB
Output-Power
107 W
Pd-Power-Dissipation
144 W
Operating-Frequency
3.5 GHz
Vgs-Gate-Source-Voltage
145 V
Id-Continuous-Drain-Current
12 A
Vds-Drain-Source-Breakdown-Voltage
28 V
Vgs-th-Gate-Source-Threshold-Voltage
- 2.9 V
Transistor-Polarity
N-Channel
Tags
TGF2929-F, TGF292, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TGF2929 GaN RF Power Transistors
Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
TGF2929-FS
DISTI # 772-TGF2929-FS
QorvoRF MOSFET Transistors DC-3.5GHz 100W 28V GaN
RoHS: Compliant
23
  • 1:$351.0000
  • 25:$316.7800
TGF2929-FS/FL, 3.1-3.5GHZ EVB
DISTI # 772-TGF2929-FS/FL-EV
QorvoRF Development Tools DC-3.5GHz 100W Eval Board
RoHS: Compliant
1
  • 1:$875.0000
1123716
DISTI # TGF2929-FS
QorvoRF POWER TRANSISTOR
RoHS: Compliant
10
  • 1:$90.0000
Image Part # Description
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Mfr.#: TGF2965-SM

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TGF2956

Mfr.#: TGF2956

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RF JFET Transistors DC-12GHz 55W 32V GaN P3dB @ 3GHz 47.6dBm
TGF2935

Mfr.#: TGF2935

OMO.#: OMO-TGF2935

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Mfr.#: TGF2952

OMO.#: OMO-TGF2952-318

RF JFET Transistors DC-14GHz 5W 32V GaN P3dB @ 3GHz 38.6dBm
TGF2955

Mfr.#: TGF2955

OMO.#: OMO-TGF2955-318

RF JFET Transistors DC-12GHz 40W 32V GaN P3dB @ 3GHz 46.5dBm
TGF2929-FS/FL, 3.1-3.5GHZ EVB

Mfr.#: TGF2929-FS/FL, 3.1-3.5GHZ EVB

OMO.#: OMO-TGF2929-FS-FL-3-1-3-5GHZ-EVB-319

RF MOSFET Transistors DC-3.5GHz 100W Eval Board
TGF2965-SM-EVB

Mfr.#: TGF2965-SM-EVB

OMO.#: OMO-TGF2965-SM-EVB-1152

RF Development Tools
TGF2960

Mfr.#: TGF2960

OMO.#: OMO-TGF2960-1190

New and Original
TGF2960-SD

Mfr.#: TGF2960-SD

OMO.#: OMO-TGF2960-SD-1190

New and Original
TGF2960-SD   T/R

Mfr.#: TGF2960-SD T/R

OMO.#: OMO-TGF2960-SD-T-R-1190

New and Original
Availability
Stock:
Available
On Order:
3500
Enter Quantity:
Current price of TGF2929-FS is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$475.17
$475.17
10
$451.41
$4 514.12
100
$427.65
$42 765.30
500
$403.89
$201 947.25
1000
$380.14
$380 136.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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