TGF2955

TGF2955
Mfr. #:
TGF2955
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-12GHz 40W 32V GaN P3dB @ 3GHz 46.5dBm
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2955 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TGF2955 more Information
Product Attribute
Attribute Value
Manufacturer
TriQuint (Qorvo)
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Waffle
Part-Aliases
1112260
Mounting-Style
SMD/SMT
Operating-Temperature-Range
- 65 C to + 150 C
Package-Case
Die
Technology
GaN SiC
Configuration
Single
Transistor-Type
HEMT
Gain
19.2 dB
Output-Power
46.4 dBm
Pd-Power-Dissipation
41 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 65
Operating-Frequency
15 GHz
Id-Continuous-Drain-Current
2.5 A
Vds-Drain-Source-Breakdown-Voltage
32 V
Transistor-Polarity
N-Channel
Maximum-Drain-Gate-Voltage
100 V
Tags
TGF295, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TGF GaN on SiC Transistors
Qorvo TGF GaN on SiC Transistors for the Satellite, P to P, and Military communications along with Marine radar and Test and instrumentation. These are small footprint (dies) that handle high power (7W to 70W) and high frequency, up to 14GHz.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
TGF2955
DISTI # 772-TGF2955
QorvoRF JFET Transistors DC-12GHz 40W 32V GaN P3dB @ 3GHz 46.5dBm
RoHS: Compliant
3
  • 1:$75.1500
  • 25:$65.7600
  • 100:$57.5500
1112260
DISTI # TGF2955
QorvoRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$33.0700
Image Part # Description
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OMO.#: OMO-TGF2977-SM

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OMO.#: OMO-TGF2060

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OMO.#: OMO-TGF2120

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OMO.#: OMO-TGF3020-SM

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Mfr.#: TGF3021-SM

OMO.#: OMO-TGF3021-SM-319

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Mfr.#: TGF3515C06

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New and Original
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Mfr.#: TGF3524C06

OMO.#: OMO-TGF3524C06-1190

New and Original
TGFGA1C105M8R

Mfr.#: TGFGA1C105M8R

OMO.#: OMO-TGFGA1C105M8R-1190

New and Original
TGFZ01A

Mfr.#: TGFZ01A

OMO.#: OMO-TGFZ01A-1190

New and Original
Availability
Stock:
Available
On Order:
2500
Enter Quantity:
Current price of TGF2955 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$86.32
$86.32
10
$82.01
$820.09
100
$77.69
$7 769.25
500
$73.38
$36 688.15
1000
$69.06
$69 060.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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