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IPW60R090CFD7XKSA1

IPW60R090CFD7XKSA1
Mfr. #:
IPW60R090CFD7XKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET HIGH POWER_NEW
Lifecycle:
New from this manufacturer.
Datasheet:
IPW60R090CFD7XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPW60R090CFD7XKSA1 Datasheet
ECAD Model:
More Information:
IPW60R090CFD7XKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
25 A
Rds On - Drain-Source Resistance:
90 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
51 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
125 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
CoolMOS CFD7
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
17 ns
Factory Pack Quantity:
240
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
88 ns
Typical Turn-On Delay Time:
33 ns
Part # Aliases:
IPW60R090CFD7 SP001686056
Tags
IPW60R09, IPW60R0, IPW60, IPW6, IPW
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 SJ High Voltage MOSFET 600V 90/95mOhm TO-247
***ical
600V CoolMOS CFD7 Power Transistor
***ronik
N-CH 600V 50A 90mOhm TO-247-3
***i-Key
HIGH POWER_NEW
***ark
Mosfet, 600V, 25A, 150Deg C, 125W; Transistor Polarity:n Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, 600V, 25A, 150DEG C, 125W; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, 600V, 25A, 150° C, 125W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:25A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.069ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFD7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS CFD7 is Infineons latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS 7 series. CoolMOS CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. | Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
Part # Mfg. Description Stock Price
IPW60R090CFD7XKSA1
DISTI # IPW60R090CFD7XKSA1-ND		Infineon Technologies AGHIGH POWER_NEW
RoHS: Compliant
Min Qty: 1
Container: Tube		241In Stock
  • 2640:$3.4439
  • 720:$4.2984
  • 240:$5.0493
  • 25:$5.8260
  • 10:$6.1630
  • 1:$6.8600
IPW60R090CFD7XKSA1
DISTI # IPW60R090CFD7XKSA1		Infineon Technologies AGCoolMOS CFD7 SJ High Voltage MOSFET 600V 90/95mOhm TO-247 - Rail/Tube (Alt: IPW60R090CFD7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$3.0900
  • 2400:$3.0900
  • 960:$3.2900
  • 480:$3.3900
  • 240:$3.4900
IPW60R090CFD7XKSA1
DISTI # SP001686056		Infineon Technologies AGCoolMOS CFD7 SJ High Voltage MOSFET 600V 90/95mOhm TO-247 (Alt: SP001686056)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€2.7900
  • 500:€2.8900
  • 100:€2.9900
  • 50:€3.0900
  • 25:€3.1900
  • 10:€3.4900
  • 1:€4.2900
IPW60R090CFD7XKSA1
DISTI # 71AC0409		Infineon Technologies AGMOSFET, 600V, 25A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes240
  • 500:$4.1300
  • 250:$4.6100
  • 100:$4.8600
  • 50:$5.1000
  • 25:$5.3500
  • 10:$5.6000
  • 1:$6.5900
IPW60R090CFD7XKSA1
DISTI # 726-IPW60R090CFD7XKS		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		0
  • 1:$6.5200
  • 10:$5.5400
  • 100:$4.8100
  • 250:$4.5600
  • 500:$4.0900
IPW60R090CFD7XKSA1
DISTI # 2916151		Infineon Technologies AGMOSFET, 600V, 25A, 150DEG C, 125W
RoHS: Compliant		480
  • 1000:$4.9500
  • 500:$5.0400
  • 250:$5.3100
  • 100:$5.6200
  • 10:$6.3500
  • 1:$6.7900
IPW60R090CFD7XKSA1
DISTI # XSKDRABV0051213		Infineon Technologies AG 
RoHS: Compliant		720 in Stock0 on Order
  • 720:$4.3200
  • 240:$4.6300
IPW60R090CFD7XKSA1
DISTI # 2916151		Infineon Technologies AGMOSFET, 600V, 25A, 150DEG C, 125W455
  • 500:£2.9900
  • 250:£3.3400
  • 100:£3.5200
  • 10:£4.0600
  • 1:£5.2500
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Availability
Stock:
468
On Order:
2451
Enter Quantity:
Current price of IPW60R090CFD7XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.52
$6.52
10
$5.54
$55.40
100
$4.81
$481.00
250
$4.56
$1 140.00
500
$4.09
$2 045.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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