PartNumber | IPW50R140CPFKSA1 | IPW50R190CEFKSA1 | IPW50R199CPFKSA1 |
Description | MOSFET HIGH POWER_LEGACY | MOSFET N-Ch 500V 63A TO247-3 | MOSFET N-CH 550V 17A TO-247 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-247-3 | TO-247-3 | - |
Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Tube | Tube | - |
Height | 21.1 mm | 21.1 mm | - |
Length | 16.13 mm | 16.13 mm | - |
Series | CoolMOS CE | CoolMOS CE | - |
Width | 5.21 mm | 5.21 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | MOSFET | MOSFET | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | IPW50R140CP IPW5R14CPXK SP000234989 | IPW50R190CEFKSA1 SP000850798 | - |
Unit Weight | 1.340411 oz | 1.340411 oz | - |
RoHS | - | Y | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Id Continuous Drain Current | - | 24.8 A | - |
Rds On Drain Source Resistance | - | 170 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 47.2 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 152 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Fall Time | - | 7.5 ns | - |
Rise Time | - | 8.5 ns | - |
Factory Pack Quantity | - | 240 | - |
Typical Turn Off Delay Time | - | 54 ns | - |
Typical Turn On Delay Time | - | 9.5 ns | - |