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IPW50R190CEFKSA1

IPW50R190CEFKSA1
Mfr. #:
IPW50R190CEFKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 500V 63A TO247-3
Lifecycle:
New from this manufacturer.
Datasheet:
IPW50R190CEFKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
500 V
Id - Continuous Drain Current:
24.8 A
Rds On - Drain-Source Resistance:
170 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
47.2 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
152 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Height:
21.1 mm
Length:
16.13 mm
Series:
CoolMOS CE
Transistor Type:
1 N-Channel
Width:
5.21 mm
Brand:
Infineon Technologies
Fall Time:
7.5 ns
Product Type:
MOSFET
Rise Time:
8.5 ns
Factory Pack Quantity:
240
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
54 ns
Typical Turn-On Delay Time:
9.5 ns
Part # Aliases:
IPW50R190CEFKSA1 SP000850798
Unit Weight:
1.340411 oz
Tags
IPW50R190, IPW50R19, IPW50R1, IPW50, IPW5, IPW
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-CH 550V 24.8A 3-Pin TO-247 Tube
***ure Electronics
500V, 0.19 ohms, 63A, TO-247 CoolMOS Power Transistor
***ineon
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
Part # Mfg. Description Stock Price
IPW50R190CEFKSA1
DISTI # IPW50R190CEFKSA1-ND		Infineon Technologies AGMOSFET N-CH 500V 18.5A TO247
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
    IPW50R190CEFKSA1
    DISTI # 50Y2084    		Infineon Technologies AGMOSFET Transistor, N Channel, 18.5 A, 500 V, 0.17 ohm, 13 V, 3 V RoHS Compliant: Yes0
      IPW50R190CEFKSA1
      DISTI # 726-IPW50R190CEFKSA1      		Infineon Technologies AGMOSFET N-Ch 500V 63A TO247-3
      RoHS: Compliant      		1
      • 1:$2.1200
      • 10:$1.8000
      • 100:$1.4400
      • 500:$1.2600
      • 1000:$1.0500
      • 2500:$0.9720
      • 5000:$0.9360
      IPW50R190CE
      DISTI # 726-IPW50R190CE      		Infineon Technologies AGMOSFET N-Ch 500V 63A TO247-3
      RoHS: Compliant      		0
      • 1:$2.1200
      • 10:$1.8000
      • 100:$1.4400
      IPW50R190CEFKSA1Infineon Technologies AGPower Field-Effect Transistor, 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
      RoHS: Compliant      		69744
      • 1000:$0.8700
      • 500:$0.9100
      • 100:$0.9500
      • 25:$0.9900
      • 1:$1.0700
      IPW50R190CEFKSA1
      DISTI # 2480873      		Infineon Technologies AGMOSFET, N-CH, 500V, 18.5A, TO-247-3
      RoHS: Compliant      		0
      • 1:$3.2400
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      Availability
      Stock:
      Available
      On Order:
      1984
      Enter Quantity:
      Current price of IPW50R190CEFKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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