STW88N65M5-4

Mfr. #:: STW88N65M5-4
Manufacturer:: STMicroelectronics
Description:: MOSFET N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 package
Lifecycle:: New from this manufacturer.
Datasheet:: STW88N65M5-4 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: STW88N65M5-4 more Information STW88N65M5-4 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-247-4

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Configuration:: Single

Tradename:: MDmesh

Series:: STW88N65M5-4

Transistor Type:: 1 N-Channel

Brand:: STMicroelectronics

Product Type:: MOSFET

Factory Pack Quantity:: 600

Subcategory:: MOSFETs

Unit Weight:: 0.211644 oz

Tags: STW88, STW8, STW

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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STW88N65M5-4 Description

***icroelectronics: N-channel 650 V, 0.024 Ohm typ., 84 A, MDmesh M5 Power MOSFET in a TO247-4 package

***ure Electronics: N-Channel 710 V 0.029 Ohm MDmesh M5 Power MOSFET - TO-247-4

***ical: Trans MOSFET N-CH 650V 84A 4-Pin(4+Tab) TO-247 Tube

***el Electronic: 0402 0.18 uF 10 V ±10% Tolerance X5R Multilayer Ceramic Capacitor

***ark: MOSFET, N-CH, 650V, 84A, TO247-4; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:84A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***icroelectronics SCT: Power MOSFETs, 650V, 84A, TO247-4, Tube

***emi: N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 75 A, 23 mΩ, TO-247 4lead

***r Electronics: Power Field-Effect Transistor, 75A I(D), 650V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***rchild Semiconductor: SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is suitable for various DC/AC power conversion for system miniaturization and higher efficiency.

***emi: N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 76 A, 41 mΩ, TO-247 4L

***et: N-Channel SuperFET II FRFET MOSFET 650V Drain to Source Voltage 76A Continuous Drain Current 595W Power Dissipation Thru-Hole 4-Pin TO-247 Tube

***r Electronics: Power Field-Effect Transistor, 76A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***el Electronic: Aluminum Electrolytic Capacitors 330μF Radial, Can - SMD ±20% Tape & Reel (TR) FT 0.413 10.50mm Surface Mount Automotive CAP ALUM 330UF 20% 50V SMD

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

***et: Trans MOSFET N-CH 650V 77.5A 4-Pin TO-247 Tube

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-4, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***icroelectronics: N-channel 650 V, 0.037 Ohm typ., 58 A MDmesh M5 Power MOSFET in a TO247-4 package

***ure Electronics: STW69N65M5-4 Series 710 V 0.045Ohm 58A N-Channel MDmesh V Power Mosfet-TO-247-4

***ical: Trans MOSFET N-CH 650V 58A 4-Pin(4+Tab) TO-247 Tube

***(Formerly Allied Electronics): MOSFET N-Ch 650V 58A FDmesh TO247-4

*** Services: CoC and 2-years warranty / RFQ for pricing

***S: French Electronic Distributor since 1988

***icroelectronics SCT: Power MOSFETs, 650V, 58A, TO247-4, Tube

***ical: Trans MOSFET N-CH 650V 33A 4-Pin(4+Tab) TO-247 Tube

***nell: MOSFET, N-CH, 650V, 33A, 171W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 171W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-4, RoHS

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

***ical: Trans MOSFET N-CH 650V 24A 4-Pin(4+Tab) TO-247 Tube

***nell: MOSFET, N-CH, 650V, 24A, 128W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.084ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 128W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-4, RoHS

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

STW88N65M5-4 More Information

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Market price

Part #	Mfg.	Description	Stock	Price
STW88N65M5-4 DISTI # V99:2348_17628551	STMicroelectronics	Trans MOSFET N-CH 650V 84A 4-Pin(4+Tab) TO-247 Tube RoHS: Compliant	110	510:$10.6670 120:$12.7190 30:$14.1300 10:$14.8830 1:$16.1210
STW88N65M5-4 DISTI # V36:1790_13795947	STMicroelectronics	Trans MOSFET N-CH 650V 84A 4-Pin(4+Tab) TO-247 Tube RoHS: Compliant	0
STW88N65M5-4 DISTI # 497-16334-5-ND	STMicroelectronics	MOSFET N-CH 650V 84A RoHS: Compliant Min Qty: 1 Container: Tube	411In Stock	510:$11.9059 120:$13.3839 30:$15.1903 10:$15.8470 1:$17.2400
STW88N65M5-4 DISTI # 25948444	STMicroelectronics	Trans MOSFET N-CH 650V 84A 4-Pin(4+Tab) TO-247 Tube RoHS: Compliant	110	120:$13.0645 30:$14.4254 1:$16.1637
STW88N65M5-4 DISTI # STW88N65M5-4	STMicroelectronics	Trans MOSFET N-CH 710V 84A 4-Pin TO-247 Tube - Rail/Tube (Alt: STW88N65M5-4) RoHS: Not Compliant Min Qty: 600 Container: Tube	Americas - 0	6000:$9.8900 3600:$10.0900 2400:$10.5900 1200:$11.0900 600:$11.6900
STW88N65M5-4 DISTI # 45AC7796	STMicroelectronics	Trans MOSFET N-CH 710V 84A 4-Pin TO-247 Tube - Bulk (Alt: 45AC7796) RoHS: Not Compliant Min Qty: 1 Container: Bulk	Americas - 0	500:$11.3400 250:$12.1300 100:$12.7500 50:$13.6100 25:$14.4700 10:$15.1000 1:$16.4200
STW88N65M5-4 DISTI # 45AC7796	STMicroelectronics	MOSFET, N-CH, 650V, 84A, TO247-4,Transistor Polarity:N Channel,Continuous Drain Current Id:84A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes	150	1:$8.7200 10:$8.7200 25:$8.7200 50:$8.7200 100:$8.7200 250:$8.7200 500:$8.7200
STW88N65M5-4 DISTI # 511-STW88N65M5-4	STMicroelectronics	MOSFET N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 package RoHS: Compliant	445	1:$16.4200 10:$15.1000 25:$14.4700 100:$12.7500 250:$12.1300 500:$11.3400
STW88N65M5-4 DISTI # 2807332	STMicroelectronics	MOSFET, N-CH, 650V, 84A, TO247-4	378	100:£9.3200 50:£9.9600 10:£10.5900 5:£12.0200 1:£12.3200
STW88N65M5-4 DISTI # 2807332	STMicroelectronics	MOSFET, N-CH, 650V, 84A, TO247-4 RoHS: Compliant	370	250:$15.7500 100:$16.8100 50:$17.4000 10:$19.0800 5:$20.6700 1:$22.0500

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	Mfr.#: CRCW06030000Z0EAC OMO.#: OMO-CRCW06030000Z0EAC-VISHAY-DALE	RES SMD 0 OHM JUMP 1/10W 0603
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STW88N65M5-4

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes