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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| BSM75GAR120DN2HOSA1 DISTI # BSM75GAR120DN2HOSA1-ND | Infineon Technologies AG | IGBT 2 MED POWER 34MM-1 RoHS: Compliant Min Qty: 10 Container: Tray | Limited Supply - Call |
|
| BSM75GAR120DN2 DISTI # SP000100462 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2kV 75A nom 625W (Alt: SP000100462) RoHS: Compliant Min Qty: 1 | Europe - 4 |
|
| BSM75GAR120DN2 DISTI # BSM75GAR120DN2 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2kV 75A nom 625W - Bulk (Alt: BSM75GAR120DN2) RoHS: Not Compliant Min Qty: 6 Container: Bulk | Americas - 0 |
|
| BSM75GAR120DN2HOSA1 DISTI # BSM75GAR120DN2HOSA1 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2kV 75A nom 625W - Trays (Alt: BSM75GAR120DN2HOSA1) RoHS: Compliant Min Qty: 10 Container: Tray | Americas - 0 |
|
| BSM75GAR120DN2HOSA1 DISTI # BSM75GAR120DN2HOSA1 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2kV 75A nom 625W - Bulk (Alt: BSM75GAR120DN2HOSA1) Min Qty: 6 Container: Bulk | Americas - 0 |
|
| BSM75GAR120DN2 DISTI # 61M5057 | Infineon Technologies AG | IGBT MODULE, CHOPPER, 1200V,Transistor Polarity:N Channel,DC Collector Current:105A,Collector Emitter Saturation Voltage Vce(on):3V,Power Dissipation Pd:625W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:7Pins RoHS Compliant: Yes | 0 | |
| BSM75GAR120DN2 DISTI # 641-BSM75GAR120DN2 | Infineon Technologies AG | IGBT Transistors 1200V 100A GAR CH RoHS: Compliant | 0 | |
| BSM75GAR120DN2 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant | 2 |
|
| BSM75GAR120DN2HOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant | 5 |
|
| BSM75GAR120DN2 DISTI # 1496960 | Infineon Technologies AG | IGBT MODULE, CHOPPER, 1200V RoHS: Compliant | 0 |
|
| BSM75GAR120DN2 DISTI # 1496960 | Infineon Technologies AG | IGBT MODULE, CHOPPER, 1200V | 0 |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: BSM75GB120DLC OMO.#: OMO-BSM75GB120DLC |
IGBT Modules 1200V 75A DUAL |
|
|
Mfr.#: BSM75GAR120DN2 OMO.#: OMO-BSM75GAR120DN2 |
IGBT Transistors 1200V 100A GAR CH |
|
|
Mfr.#: BSM75GB120D OMO.#: OMO-BSM75GB120D-1190 |
New and Original |
|
|
Mfr.#: BSM75GB120DN1E3204 OMO.#: OMO-BSM75GB120DN1E3204-1190 |
New and Original |
|
|
Mfr.#: BSM75GB120DN2(SCH100) |
New and Original |
|
|
Mfr.#: BSM75GB120DNA OMO.#: OMO-BSM75GB120DNA-1190 |
New and Original |
|
|
Mfr.#: BSM75GAL120DN2HOSA1 |
MEDIUM POWER 34MM |
|
|
Mfr.#: BSM75GD60DLCBOSA1 |
LOW POWER ECONO |
|
|
Mfr.#: BSM75GP60BOSA1 |
IGBT 2 LOW POWER ECONO3-3 |
|
|
Mfr.#: BSM75GB60DLC OMO.#: OMO-BSM75GB60DLC-125 |
IGBT Modules 600V 75A DUAL |