PartNumber | BSM75GAL120DN2 | BSM75GAR120DN2 | BSM75GAL120DN2HOSA1 |
Description | IGBT Modules 1200V 75A CHOPPER | IGBT Transistors 1200V 100A GAR CH | MEDIUM POWER 34MM |
Manufacturer | Infineon | Infineon | - |
Product Category | IGBT Modules | IGBT Transistors | - |
RoHS | Y | Y | - |
Product | IGBT Silicon Modules | - | - |
Configuration | Half Bridge | Single | - |
Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
Collector Emitter Saturation Voltage | 2.5 V | 2.5 V | - |
Continuous Collector Current at 25 C | 105 A | 100 A | - |
Gate Emitter Leakage Current | 400 nA | 400 nA | - |
Pd Power Dissipation | 625 W | 625 W | - |
Package / Case | Half Bridge GAL 1 | IS4 (34 mm )-5 | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Packaging | Tray | Tray | - |
Height | 30.5 mm | 30.5 mm | - |
Length | 94 mm | 94 mm | - |
Width | 34 mm | 34 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Mounting Style | Chassis Mount | Chassis Mount | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Product Type | IGBT Modules | IGBT Transistors | - |
Factory Pack Quantity | 10 | 10 | - |
Subcategory | IGBTs | IGBTs | - |
Part # Aliases | BSM75GAL120DN2HOSA1 SP000106455 | BSM75GAR120DN2HOSA1 SP000100462 | - |
Technology | - | Si | - |
Continuous Collector Current | - | 105 A | - |
Unit Weight | - | 5.436423 oz | - |