BSM75GAL120DN2

BSM75GAL120DN2
Mfr. #:
BSM75GAL120DN2
Manufacturer:
Infineon Technologies
Description:
IGBT Modules 1200V 75A CHOPPER
Lifecycle:
New from this manufacturer.
Datasheet:
BSM75GAL120DN2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Modules
RoHS:
Y
Product:
IGBT Silicon Modules
Configuration:
Half Bridge
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
2.5 V
Continuous Collector Current at 25 C:
105 A
Gate-Emitter Leakage Current:
400 nA
Pd - Power Dissipation:
625 W
Package / Case:
Half Bridge GAL 1
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tray
Height:
30.5 mm
Length:
94 mm
Width:
34 mm
Brand:
Infineon Technologies
Mounting Style:
Chassis Mount
Maximum Gate Emitter Voltage:
20 V
Product Type:
IGBT Modules
Factory Pack Quantity:
10
Subcategory:
IGBTs
Part # Aliases:
BSM75GAL120DN2HOSA1 SP000106455
Tags
BSM75GAL12, BSM75GAL1, BSM75GAL, BSM75GA, BSM75G, BSM75, BSM7, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Module N-CH 1.2kV 105A 5-Pin 34mm
***omponent
Infineon power module
Part # Mfg. Description Stock Price
BSM75GAL120DN2HOSA1
DISTI # V99:2348_18204621
Infineon Technologies AGMEDIUM POWER 34MM10
  • 100:$68.2099
  • 25:$75.7900
  • 10:$84.2099
  • 1:$93.5699
BSM75GAL120DN2HOSA1
DISTI # BSM75GAL120DN2HOSA1-ND
Infineon Technologies AGIGBT 2 MED POWER 34MM-1
Min Qty: 10
Container: Tray
Limited Supply - Call
  • 10:$74.7940
BSM75GAL120DN2HOSA1
DISTI # 31578438
Infineon Technologies AGMEDIUM POWER 34MM10
  • 100:$68.2099
  • 25:$75.7900
  • 10:$84.2099
  • 1:$93.5699
BSM75GAL120DN2
DISTI # SP000106455
Infineon Technologies AGTrans IGBT Module N-CH 1200V 105A ±20V Screw Mount (Alt: SP000106455)
Min Qty: 1
Europe - 344
    BSM75GAL120DN2HOSA1
    DISTI # BSM75GAL120DN2HOSA1
    Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 75A nom 625W CHOPPER 5-Pin 94x34mm - Trays (Alt: BSM75GAL120DN2HOSA1)
    RoHS: Compliant
    Min Qty: 10
    Container: Tray
    Americas - 0
      BSM75GAL120DN2
      DISTI # 641-BSM75GAL120DN2
      Infineon Technologies AGIGBT Modules 1200V 75A CHOPPER
      RoHS: Compliant
      58
      • 1:$81.4100
      • 5:$79.9200
      • 10:$76.3200
      • 25:$73.7800
      • 100:$68.7000
      BSM75GAL120DN2HOSA1
      DISTI # XSKDRABV0051740
      Infineon Technologies AG 
      RoHS: Compliant
      274 in Stock0 on Order
      • 274:$88.7600
      • 10:$95.1000
      BSM75GAL120DN2Eupec Gmbh & Co KgInsulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel
      RoHS: Not Compliant
      Europe - 12
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        Availability
        Stock:
        60
        On Order:
        2043
        Enter Quantity:
        Current price of BSM75GAL120DN2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $81.41
        $81.41
        5
        $79.92
        $399.60
        10
        $76.32
        $763.20
        25
        $73.78
        $1 844.50
        100
        $68.70
        $6 870.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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