BSM75GAL1

BSM75GAL120DN2 vs BSM75GAL100D vs BSM75GAL120D

 
PartNumberBSM75GAL120DN2BSM75GAL100DBSM75GAL120D
DescriptionIGBT Modules 1200V 75A CHOPPER
ManufacturerInfineon-SIEMENS
Product CategoryIGBT Modules-Module
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationHalf Bridge--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.5 V--
Continuous Collector Current at 25 C105 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation625 W--
Package / CaseHalf Bridge GAL 1--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height30.5 mm--
Length94 mm--
Width34 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM75GAL120DN2HOSA1 SP000106455--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSM75GAL120DN2 IGBT Modules 1200V 75A CHOPPER
BSM75GAL120DN2HOSA1 MEDIUM POWER 34MM
BSM75GAL100D New and Original
BSM75GAL120D New and Original
BSM75GAL120DN2 IGBT Modules 1200V 75A CHOPPER
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