IRFH5406TR2PBF

IRFH5406TR2PBF
Mfr. #:
IRFH5406TR2PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 60V 40A 5X6 PQFN
Lifecycle:
New from this manufacturer.
Datasheet:
IRFH5406TR2PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
IRFH54, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, 60V, 40A, 14.4 mOhm, 23 nC Qg, PQFN 5x6
***ernational Rectifier
60V Single N-Channel HEXFET Power MOSFET in a PQFN package
***ment14 APAC
MOSFET,N CH,60V,40A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:60V; On Resistance Rds(on):11.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:3.6W; Voltage Vgs Max:20V
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***trelec
MOSFET Operating temperature: -55...+150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 100 W
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
***ernational Rectifier
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, 60V, 87A, 7mOhm, 40 nC Qg, PQFN5x6
***ical
Trans MOSFET N-CH 60V 16A 8-Pin QFN T/R
***trelec
MOSFET PQFN-8 (5x6) N 60V 16 A
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT
***ment14 APAC
MOSFET,N CH,60V,16A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:100W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:89A; Power Dissipation Pd:100W; Voltage Vgs Max:20V
*** Electronics
INFINEON IRFH5006TRPBF MOSFET Transistor, N Channel, 21 A, 60 V, 0.0035 ohm, 10 V, 4 VNew
***ure Electronics
Single N-Channel 60 V 4.1 mOhm 69 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***(Formerly Allied Electronics)
MOSFET; 60V; 100A; 4.1mOhm; 67 nC Qg; PQFN5x6
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***nell
MOSFET, N-CH, 60V, 21A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 3.6W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
Part # Mfg. Description Stock Price
IRFH5406TR2PBF
DISTI # IRFH5406TR2PBFCT-ND
Infineon Technologies AGMOSFET N-CH 60V 40A 5X6 PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    IRFH5406TR2PBF
    DISTI # IRFH5406TR2PBFDKR-ND
    Infineon Technologies AGMOSFET N-CH 60V 40A 5X6 PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      IRFH5406TR2PBF
      DISTI # 70019279
      Infineon Technologies AGMOSFET,60V,40A,14.4 mOhm,23 nC Qg,PQFN 5x6
      RoHS: Compliant
      0
      • 800:$1.3100
      • 1600:$1.2840
      • 4000:$1.2450
      • 8000:$1.1920
      • 20000:$1.1140
      IRFH5406TR2PBF
      DISTI # 942-IRFH5406TR2PBF
      Infineon Technologies AGMOSFET MOSFT 60V 40A 14.4mOhm 23nC Qg
      RoHS: Compliant
      0
        Image Part # Description
        IRFH5406TRPBF

        Mfr.#: IRFH5406TRPBF

        OMO.#: OMO-IRFH5406TRPBF

        MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC
        IRFH5406TR2PBF

        Mfr.#: IRFH5406TR2PBF

        OMO.#: OMO-IRFH5406TR2PBF-INFINEON-TECHNOLOGIES

        MOSFET N-CH 60V 40A 5X6 PQFN
        IRFH5406

        Mfr.#: IRFH5406

        OMO.#: OMO-IRFH5406-1190

        New and Original
        IRFH5406TRPBF

        Mfr.#: IRFH5406TRPBF

        OMO.#: OMO-IRFH5406TRPBF-INFINEON-TECHNOLOGIES

        MOSFET N-CH 60V 40A 8-PQFN
        Availability
        Stock:
        Available
        On Order:
        4000
        Enter Quantity:
        Current price of IRFH5406TR2PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $1.67
        $1.67
        10
        $1.59
        $15.88
        100
        $1.50
        $150.39
        500
        $1.42
        $710.20
        1000
        $1.34
        $1 336.80
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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