TP65H050WS

TP65H050WS
Mfr. #:
TP65H050WS
Manufacturer:
Transphorm
Description:
MOSFET GAN FET 650V 34A TO247
Lifecycle:
New from this manufacturer.
Datasheet:
TP65H050WS Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TP65H050WS more Information
Product Attribute
Attribute Value
Manufacturer:
Transphorm
Product Category:
MOSFET
Technology:
GaN Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
36 A
Rds On - Drain-Source Resistance:
60 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
24 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
119 W
Configuration:
Single
Channel Mode:
Enhancement
Transistor Type:
1 N-Channel
Brand:
Transphorm
Fall Time:
11 ns
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
30
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
86 ns
Typical Turn-On Delay Time:
51 ns
Tags
TP65H, TP65, TP6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
650V GaN FETs in TO-247 Packages
Transphorm 650V GaN FETs in TO-247 Packages combine state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies. The devices offer superior reliability and performance with improved efficiency over silicon. The FETs have a lower gate charge, lower crossover loss, and a smaller reverse recovery charge.
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Availability
Stock:
504
On Order:
2487
Enter Quantity:
Current price of TP65H050WS is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$16.19
$16.19
10
$14.72
$147.20
25
$13.61
$340.25
50
$13.04
$652.00
100
$12.51
$1 251.00
250
$11.40
$2 850.00
500
$10.68
$5 340.00
1000
$9.75
$9 750.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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