IRF7379TRPBF

Mfr. #:: IRF7379TRPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFT DUAL N/PCh 30V 5.8A
Lifecycle:: New from this manufacturer.
Datasheet:: IRF7379TRPBF Datasheet
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More Information:: IRF7379TRPBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 5.8 A

Rds On - Drain-Source Resistance:: 75 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 16.7 nC

Pd - Power Dissipation:: 2.5 W

Configuration:: Dual

Packaging:: Reel

Height:: 1.75 mm

Length:: 4.9 mm

Transistor Type:: 1 N-Channel, 1 P-Channel

Width:: 3.9 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 4000

Subcategory:: MOSFETs

Part # Aliases:: SP001571968

Unit Weight:: 0.019048 oz

Tags: IRF7379, IRF737, IRF73, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IRF7379TRPBF Description

***ure Electronics: IRF7379 Series 30 V 0.045 Ohm N and P-Channel HEXFET® Power MOSFET - SOIC-8

***et: Trans MOSFET N/P-CH 30V 5.8A/4.3A 8-Pin SOIC T/R

***ineon SCT: 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.8A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes

***et: Trans MOSFET N-CH 30V 4.9A 8-Pin SOIC T/R

***(Formerly Allied Electronics): MOSFET, DUAL N-CHANNEL, 30V, 4.9A, SO-8, Q101 QUALIFIED

***ernational Rectifier: 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:4.9A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes

***(Formerly Allied Electronics): MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.07Ohm; ID -4.6A; SO-8; PD 2.5W; VGS +/-20V

*** Source Electronics: Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R / MOSFET P-CH 30V 4.6A 8-SOIC

***eco: Transistor MOSFET P Channel 30 Volt 4.6 Amp 8 Pin SOIC

***ure Electronics: Single P-Channel 30 V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8

***ter Electronics: MOSFET, P-CHANNEL, -30V, -4.6A, 70 MOHM, 27 NC QG, SO-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: P CHANNEL MOSFET, -30V, 4.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***ure Electronics: Dual N/P-Channel 30 V 2.1 W 12.9/12.7 nC Silicon Surface Mount Mosfet - SOIC-8

***des Inc SCT: 30V SO8 Complementary dual enhancement mode MOSFET, N+P, 30V VDS, 20±V VGS

***et: Trans MOSFET N/P-CH 30V 7.3A/5.3A 8-Pin SO T/R

***ark: Mosfet, Dual, N/p-Ch, 30V, 7.3A Rohs Compliant: Yes

***ronik: CMOS 30V 7,3/5,3A 24mOhm SO-8 RoHSconf

***ment14 APAC: MOSFET, DUAL, N/P-CH, 30V, 7.3A;

***et: Trans MOSFET P-CH 30V 4.9A 8-Pin SOIC T/R

***(Formerly Allied Electronics): MOSFET, DUAL P-CHANNEL, -30V, 4.9A, SO-8, HALOGEN-FREE

*** Electronic Components: IGBT Transistors MOSFET MOSFT DUAL PCh -30V 4.9A

***S: French Electronic Distributor since 1988

***ark: DUAL P CH MOSFET, -30V, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes

***et Japan: Transistor MOSFET Array Dual P-CH 30V 4.9A 8-Pin SOIC T/R

***des Inc SCT: Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***nell: MOSFET, DUAL P-CH, -30V, -3.9A, SOIC; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -3.9A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 1.1W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***(Formerly Allied Electronics): MOSFET P-Ch 30V 3.9A Enhancement SOIC8

***ical: Trans MOSFET P-CH 30V 3.9A Automotive 8-Pin SO T/R

***ronik: Dual P-CH -30V -3,9A 70mOhm SO8

***(Formerly Allied Electronics): MOSFET P-Ch 30V 3.8A Enhancement SOIC8

***et: Trans MOSFET P-CH 30V 3.8A 8-Pin SO T/R

***ark: Mosfet, P-Ch, 30V, 3.8A, Soic Rohs Compliant: Yes

***des Inc SCT: P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

IRF7379TRPBF More Information

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRF7379TRPBF DISTI # IRF7379PBFCT-ND	Infineon Technologies AG	MOSFET N/P-CH 30V 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3018In Stock	1000:$0.4305 500:$0.5382 100:$0.7266 10:$0.9420 1:$1.0800
IRF7379TRPBF DISTI # IRF7379PBFDKR-ND	Infineon Technologies AG	MOSFET N/P-CH 30V 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3018In Stock	1000:$0.4305 500:$0.5382 100:$0.7266 10:$0.9420 1:$1.0800
IRF7379TRPBF DISTI # IRF7379PBFTR-ND	Infineon Technologies AG	MOSFET N/P-CH 30V 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	4000:$0.3788
IRF7379TRPBF DISTI # IRF7379TRPBF	Infineon Technologies AG	Trans MOSFET N/P-CH 30V 5.8A/4.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7379TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.2729 8000:$0.2629 16000:$0.2539 24000:$0.2449 40000:$0.2409
IRF7379TRPBF DISTI # 34AC1779	Infineon Technologies AG	MOSFET, N & P-CH, 30V, 5.8A, SOIC,Transistor Polarity:N and P Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power RoHS Compliant: Yes	3390	1:$0.8900 10:$0.7370 25:$0.6500 50:$0.5620 100:$0.4750 250:$0.4430 500:$0.4120 1000:$0.3800
IRF7379TRPBF DISTI # 70018897	Infineon Technologies AG	MOSFET,DUAL N/P-CHANNEL,30V,5.8A,SO-8 RoHS: Compliant	0	4000:$1.2600 8000:$1.2350 20000:$1.1970 40000:$1.1470 100000:$1.0710
IRF7379TRPBF DISTI # 942-IRF7379TRPBF	Infineon Technologies AG	MOSFET MOSFT DUAL N/PCh 30V 5.8A RoHS: Compliant	3835	1:$0.8900 10:$0.7370 100:$0.4750 1000:$0.3800 4000:$0.3210 8000:$0.3090 24000:$0.2970
IRF7379TRPBF DISTI # 2781211	Infineon Technologies AG	MOSFET, N & P-CH, 30V, 5.8A, SOIC RoHS: Compliant	3390	5:$1.2300 25:$1.0700 100:$0.8750 250:$0.7390 500:$0.6400 1000:$0.6050 5000:$0.5730
IRF7379TRPBF DISTI # 2781211	Infineon Technologies AG	MOSFET, N & P-CH, 30V, 5.8A, SOIC RoHS: Compliant	3390	5:£0.8360 25:£0.7520 100:£0.5790 250:£0.5040 500:£0.4290

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Availability

Stock:: Available
On Order:: 1987
Enter Quantity:

Current price of IRF7379TRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.89~~; ~~$0.89~~

10: ~~$0.74~~; ~~$7.37~~

100: ~~$0.48~~; ~~$47.50~~

1000: ~~$0.38~~; ~~$380.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRF7379TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes