IRF7379

IRF7379QTRPBF vs IRF7379PBF vs IRF7379

 
PartNumberIRF7379QTRPBFIRF7379PBFIRF7379
DescriptionMOSFET AUTO HEXFET SO-8MOSFET 30V DUAL N / P CH 20V VGS MAXMOSFET N/P-CH 30V 8-SOIC
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-Channel, P-ChannelN-Channel, P-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current5.8 A5.8 A-
Rds On Drain Source Resistance75 mOhms75 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge16.7 nC16.7 nC-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationDualDual-
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
Transistor Type1 N-Channel, 1 P-Channel1 N-Channel, 1 P-Channel-
Width3.9 mm3.9 mm-
BrandInfineon / IRInfineon / IR-
Product TypeMOSFETMOSFET-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.019048 oz0.019048 oz-
RoHS-Y-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Channel Mode-Enhancement-
Packaging-Tube-
Type-Power MOSFET-
Fall Time-7.7 ns, 18 ns-
Rise Time-21 ns, 17 ns-
Factory Pack Quantity-95-
Typical Turn Off Delay Time-22 ns, 25 ns-
Typical Turn On Delay Time-6.8 ns, 11 ns-
Part # Aliases-SP001555260-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRF7379TRPBF MOSFET MOSFT DUAL N/PCh 30V 5.8A
IRF7379 MOSFET N/P-CH 30V 8-SOIC
IRF7379TR MOSFET N/P-CH 30V 8-SOIC
IRF7379QTRPBF MOSFET N/P-CH 30V 8-SOIC
IRF7379PBF MOSFET N/P-CH 30V 8-SOIC
IRF7379TRPBF MOSFET N/P-CH 30V 8-SOIC
Infineon / IR
Infineon / IR
IRF7379QTRPBF MOSFET AUTO HEXFET SO-8
IRF7379PBF MOSFET 30V DUAL N / P CH 20V VGS MAX
IRF7379QTRPBF. New and Original
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