IXTQ22N60P

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-3P-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

22 A

Rds On - Drain-Source Resistance:

350 mOhms

Vgs - Gate-Source Voltage:

30 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

400 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

20.3 mm

Length:

15.8 mm

Series:

IXTQ22N60

Transistor Type:

1 N-Channel

Width:

4.9 mm

Brand:

IXYS

Forward Transconductance - Min:

21 S

Fall Time:

23 ns

Product Type:

MOSFET

Rise Time:

20 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

60 ns

Typical Turn-On Delay Time:

20 ns

Unit Weight:

0.194007 oz

Tags

IXTQ22N, IXTQ22, IXTQ2, IXTQ, IXT