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IXGH15N120CD1

IXGH15N120CD1
Mfr. #:
IXGH15N120CD1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 30 Amps 1200V 3.8 Rds
Lifecycle:
New from this manufacturer.
Datasheet:
IXGH15N120CD1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXGH15N120CD1 Datasheet
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247AD-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1200 V
Maximum Gate Emitter Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Series:
IXGH15N120
Packaging:
Tube
Continuous Collector Current Ic Max:
30 A
Height:
21.46 mm
Length:
16.26 mm
Width:
5.3 mm
Brand:
IXYS
Product Type:
IGBT Transistors
Factory Pack Quantity:
30
Subcategory:
IGBTs
Unit Weight:
0.229281 oz
Tags
IXGH15N1, IXGH15, IXGH1, IXGH, IXG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 1200V 30A 150W TO247
***S
new, original packaged
***el Nordic
Contact for details
***p One Stop Global
Trans IGBT Chip N-CH 1200V 30A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***ure Electronics
IRG4PH40KDPBF Series 1200 V 15 A N-Channel UltraFast IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.74 V Current release time: 220 ns Power dissipation: 160 W
***ment14 APAC
SINGLE IGBT, 1.2KV, 30A; Transistor Type; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:3.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Fall Time Max:330ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:60A; Rise Time:31ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ineon SCT
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***ure Electronics
IRG4PH40K Series 1200 V 15 A Through Hole UltraFast IGBT - TO-247AC
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:30A; Collector Emitter Saturation Voltage, Vce(sat):3.4V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.74V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40KPBF; Fall Time Max:230ns; Fall Time tf:230ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Pulsed Current Icm:60A; Rise Time:22ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ical
Trans IGBT Chip N-CH 1200V 30A 294000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
NGTB15N120: 1200 V 30 A 294 W Through Hole Field Stop II IGBT - TO-247-3
***ark
Transistor, Igbt, 1.2Kv, 30A, To-247; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:294W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ark
Igbt Single Transistor, 30 A, 1.85 V, 259 W, 1.2 Kv, To-247, 3
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
***ical
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 30A, TO-247-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 259W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***ical
Trans IGBT Chip N-CH 1200V 30A 333000mW 3-Pin(3+Tab) TO-247 Tube
***emi
IGBT 1200V 15A FS2-RC Induction Heating
***ark
Igbt, Single, 1.2Kv, 30A, To-247 Rohs Compliant: Yes
***i-Key
IGBT TRENCH/FS 1200V 30A TO247
*** Stop Electro
Insulated Gate Bipolar Transistor
***nell
IGBT, SINGLE, 1.2KV, 30A, TO-247; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 333W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pin
***ical
Trans IGBT Chip N-CH 1200V 30A 333000mW 3-Pin(3+Tab) TO-247 Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AB
***emi
IGBT, 1200V, 15A, Field Stop Trench
***ark
RAIL/1200V 15A FS2 Trench IGBT
***el Electronic
IC REG LINEAR 24V 500MA TO252-3
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
Part # Mfg. Description Stock Price
IXGH15N120CD1
DISTI # IXGH15N120CD1-ND		IXYS CorporationIGBT 1200V 30A 150W TO247
RoHS: Compliant
Min Qty: 30
Container: Bulk		Temporarily Out of Stock
  • 30:$7.3830
IXGH15N120CD1
DISTI # 747-IXGH15N120CD1		IXYS CorporationIGBT Transistors 30 Amps 1200V 3.8 Rds
RoHS: Compliant		0
    Image Part # Description
    IXGH15N120BD1

    Mfr.#: IXGH15N120BD1

    OMO.#: OMO-IXGH15N120BD1

    		 IGBT Transistors 30 Amps 1200V 3.2 Rds
    IXGH15N120CD1

    Mfr.#: IXGH15N120CD1

    OMO.#: OMO-IXGH15N120CD1

    		 IGBT Transistors 30 Amps 1200V 3.8 Rds
    IXGH15N120B

    Mfr.#: IXGH15N120B

    OMO.#: OMO-IXGH15N120B

    		 IGBT Transistors 30 Amps 1200V 3.2 Rds
    IXGH15N120B2D1

    Mfr.#: IXGH15N120B2D1

    OMO.#: OMO-IXGH15N120B2D1

    		 IGBT Transistors 30 Amps 1200V 2.7 V Rds
    IXGH15N120C

    Mfr.#: IXGH15N120C

    OMO.#: OMO-IXGH15N120C-IXYS-CORPORATION

    		 IGBT 1200V 30A 150W TO247AD
    IXGH15N120DI

    Mfr.#: IXGH15N120DI

    OMO.#: OMO-IXGH15N120DI-1190

    		 New and Original
    IXGH15N60B3D

    Mfr.#: IXGH15N60B3D

    OMO.#: OMO-IXGH15N60B3D-1190

    		 New and Original
    IXGH15N120CD1

    Mfr.#: IXGH15N120CD1

    OMO.#: OMO-IXGH15N120CD1-IXYS-CORPORATION

    		 IGBT Transistors 30 Amps 1200V 3.8 Rds
    IXGH15N120B2D1

    Mfr.#: IXGH15N120B2D1

    OMO.#: OMO-IXGH15N120B2D1-IXYS-CORPORATION

    		 IGBT Transistors 30 Amps 1200V 2.7 V Rds
    IXGH15N120B

    Mfr.#: IXGH15N120B

    OMO.#: OMO-IXGH15N120B-IXYS-CORPORATION

    		 IGBT Transistors 30 Amps 1200V 3.2 Rds
    Availability
    Stock:
    Available
    On Order:
    2500
    Enter Quantity:
    Current price of IXGH15N120CD1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    30
    $7.38
    $221.40
    60
    $6.75
    $405.00
    120
    $6.66
    $799.20
    270
    $6.07
    $1 638.90
    510
    $5.58
    $2 845.80
    1020
    $4.86
    $4 957.20
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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