IXGA20N120B

Mfr. #:: IXGA20N120B
Manufacturer:: Littelfuse
Description:: IGBT Transistors 40 Amps 1200V 2.5 Rds
Lifecycle:: New from this manufacturer.
Datasheet:: IXGA20N120B Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IXGA20N120B Datasheet
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: IXYS

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Series:: IXGA20N120

Packaging:: Tube

Brand:: IXYS

Product Type:: IGBT Transistors

Factory Pack Quantity:: 50

Subcategory:: IGBTs

Unit Weight:: 0.056438 oz

Tags: IXGA20N120B, IXGA20N12, IXGA20N1, IXGA20, IXGA2, IXGA, IXG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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Vacuum Packaging with PL

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IXGA20N120B Description

***i-Key: IGBT 1200V 40A 150W TO263

***th Star Micro: IGBT 1200V 40A TO-263

***ical: Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK Rail

***ure Electronics: NPT Series N Channel 1200 V 35 A 298 W IGBT Transistor - TO263AB

***ark: TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,17A I(C),TO-263AB

***r Electronics: Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB

***rchild Semiconductor: HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

***ical: Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3-Pin(2+Tab) D2PAK T/R

***ineon SCT: Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies, PG-TO263-3, RoHS

***ineon: Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: 30% lower E off compared to previous generation; Short circuit withstand time 10s; Designed for operation above 30kHz; High ruggedness, temperature stable behaviour; Pb-free lead plating; RoHS compliant; Qualified according to JEDEC for target applications | Target Applications: Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers, welding and SMPS segments.

***ical: Trans IGBT Chip N-CH 1200V 11A 60000mW 3-Pin(2+Tab) D2PAK T/R

*** Electronic Components: IGBT Modules 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT

***el Electronic: FIXED IND 2.9NH 450MA 250 MOHM

***ure Electronics: APT40GR120 Series 1200 V 88 A 210nC 500 W NPT Type IGBT - D3PAK

***p One Stop: Trans IGBT Chip N-CH 1.2KV 88A 3-Pin(2+Tab) D3PAK

*** Stop Electro: Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel

***p One Stop: Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(2+Tab) D2PAK Tube

***ineon SCT: 600V Warp 60-150 kHz Discrete IGBT in a D2Pak package, D2PAK-3, RoHS

***ure Electronics: IRG4BC40W Series 600 V 40 A Insulated Gate Bipolar Transistor - D2PAK-3

***ment14 APAC: IGBT, D2-PAK; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:40A; Package / Case:D2-PAK; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:23ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V

***ical: Trans IGBT Chip N-CH 600V 40A 208000mW Automotive 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB

***or: IGBT FIELD STOP 600V 40A D2PAK

***ure Electronics: IGBT Transistors 600V 20A FSP IGBT

***ment14 APAC: IGBT, 600V, 40A, 150DEG C, 208W;

***rchild Semiconductor: Using novel field-stop IGBT technology, Fairchild’s new series of field-stop IGBTs offer optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential.

Market price

Part #	Mfg.	Description	Stock	Price
IXGA20N120B DISTI # IXGA20N120B-ND	IXYS Corporation	IGBT 1200V 40A 150W TO263 RoHS: Compliant Min Qty: 50 Container: Tube	Temporarily Out of Stock	50:$6.5220
IXGA20N120B3 DISTI # IXGA20N120B3-ND	IXYS Corporation	IGBT 1200V 36A 180W TO263 RoHS: Compliant Min Qty: 50 Container: Tube	Temporarily Out of Stock	50:$4.3706
IXGA20N120B DISTI # 747-IXGA20N120B	IXYS Corporation	IGBT Transistors 40 Amps 1200V 2.5 Rds RoHS: Compliant	0
IXGA20N120B3 DISTI # 747-IXGA20N120B3	IXYS Corporation	IGBT Modules GenX3 1200V IGBTs	62	1:$6.4900 10:$5.3400 25:$4.7600 50:$4.3700 100:$3.7900 250:$3.5900 500:$3.3000 1000:$3.0100 2500:$2.5500

Related products

Image	Part #	Description
	Mfr.#: IXGA20N120B3 OMO.#: OMO-IXGA20N120B3	IGBT Modules GenX3 1200V IGBTs
	Mfr.#: IXGA20N120A3 OMO.#: OMO-IXGA20N120A3	IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
	Mfr.#: IXGA28N60A3 OMO.#: OMO-IXGA28N60A3	IGBT Transistors DISC IGBT PT-LOW FREQUENCY
	Mfr.#: IXGA20N120A3-TRL OMO.#: OMO-IXGA20N120A3-TRL	IGBT Transistors IXGA20N120A3 TRL
	Mfr.#: IXGA20N120B3-TRL OMO.#: OMO-IXGA20N120B3-TRL	IGBT Transistors IXGA20N120B3 TRL
	Mfr.#: IXGA20N120 OMO.#: OMO-IXGA20N120	IGBT Transistors 40 Amps 1200V 2.5 Rds
	Mfr.#: IXGA24N60C OMO.#: OMO-IXGA24N60C-IXYS-CORPORATION	IGBT 600V 48A 150W TO263AA
	Mfr.#: IXGA20N120B3 OMO.#: OMO-IXGA20N120B3-IXYS-CORPORATION	IGBT Modules GenX3 1200V IGBTs
	Mfr.#: IXGA20N120B OMO.#: OMO-IXGA20N120B-IXYS-CORPORATION	IGBT Transistors 40 Amps 1200V 2.5 Rds
	Mfr.#: IXGA20N120 OMO.#: OMO-IXGA20N120-IXYS-CORPORATION	IGBT Transistors 40 Amps 1200V 2.5 Rds

Availability

Stock:: Available
On Order:: 3500
Enter Quantity:

Current price of IXGA20N120B is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

50: ~~$5.96~~; ~~$298.00~~

100: ~~$5.89~~; ~~$589.00~~

250: ~~$5.36~~; ~~$1 340.00~~

500: ~~$4.93~~; ~~$2 465.00~~

1000: ~~$4.30~~; ~~$4 300.00~~

2500: ~~$4.24~~; ~~$10 600.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IXGA20N120B

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes