IPP086N10N3 G

Mfr. #:: IPP086N10N3 G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: IPP086N10N3 G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 80 A

Rds On - Drain-Source Resistance:: 8.2 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 125 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon Technologies

Fall Time:: 8 ns

Product Type:: MOSFET

Rise Time:: 42 ns

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 31 ns

Typical Turn-On Delay Time:: 18 ns

Part # Aliases:: IPP086N10N3GXKSA1 IPP86N1N3GXK SP000680840

Unit Weight:: 0.211644 oz

Tags: IPP086N10N3G, IPP086N10N, IPP086, IPP08, IPP0, IPP

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Part #	Mfg.	Description	Stock	Price
IPP086N10N3GXKSA1 DISTI # IPP086N10N3GXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 100V 80A TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	940In Stock	1000:$0.9148 500:$1.0839 100:$1.3658 10:$1.6760 1:$1.8500
IPP086N10N3GHKSA1 DISTI # IPP086N10N3GHKSA1-ND	Infineon Technologies AG	MOSFET N-CH 100V 80A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
IPP086N10N3GXK DISTI # SP000680840	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 Tube (Alt: SP000680840) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 3500	1:€0.9089 10:€0.8079 25:€0.7269 50:€0.6609 100:€0.6059 500:€0.5589 1000:€0.5189
IPP086N10N3 G DISTI # IPP086N10N3 G	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin TO-220 Tube (Alt: IPP086N10N3 G) RoHS: Compliant Min Qty: 500 Container: Tube	Asia - 0
IPP086N10N3 G DISTI # SP000680840	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin TO-220 Tube (Alt: SP000680840) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€0.9629 10:€0.8079 25:€0.6749 50:€0.5879 100:€0.5759 500:€0.5609 1000:€0.5509
IPP086N10N3GXK DISTI # IPP086N10N3GXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: IPP086N10N3GXKSA1) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.5899 2000:$0.5689 3000:$0.5479 5000:$0.5299 10000:$0.5199
IPP086N10N3GXKSA1 DISTI # 12AC9726	Infineon Technologies AG	MOSFET, N-CH, 100V, 80A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0074ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power RoHS Compliant: Yes	393	1:$2.0100 10:$1.8200 100:$1.5000 500:$1.1900 1000:$1.0100
IPP086N10N3 G DISTI # 726-IPP086N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3 RoHS: Compliant	2481	1:$1.5100 10:$1.2900 100:$1.0300 500:$0.8970
IPP086N10N3GHKSA1 DISTI # 726-IPP086N10N3GHKSA	Infineon Technologies AG	MOSFET N-Ch 100V 80A TO220-3 RoHS: Compliant	0
IPP086N10N3G	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	150	1000:$0.6700 500:$0.7100 100:$0.7400 25:$0.7700 1:$0.8300
IPP086N10N3GXKSA1 DISTI # 8922157P	Infineon Technologies AG	MOSFET N-CHANNEL 100V 80A OPTIMOS TO220, TU	110	50:£1.0300 100:£0.7960
IPP086N10N3GXKSA1 DISTI # IPP086N10N3GXKSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,80A,125W,PG-TO220-3	523	1:$1.2422 5:$1.0692 25:$0.8593 250:$0.7455 1000:$0.6943
IPP086N10N3GXKSA1 DISTI # 2709893	Infineon Technologies AG	MOSFET, N-CH, 100V, 80A, TO-220 RoHS: Compliant	393	1:$2.6300 10:$2.2900 100:$1.8700
IPP086N10N3G	Infineon Technologies AG	100V,80A,N Channel Power MOSFET	30	1:$1.1800 100:$0.9900 500:$0.8700 1000:$0.8500
IPP086N10N3GXKSA1 DISTI # XSKDRABS0006532	Infineon Technologies AG	RoHS: Compliant	2520	500:$0.9839 2520:$0.9183
IPP086N10N3GXKSA1 DISTI # 2709893	Infineon Technologies AG	MOSFET, N-CH, 100V, 80A, TO-220 RoHS: Compliant	913	5:£1.3000 25:£1.0100 100:£0.8040 250:£0.7790 500:£0.7540

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Availability

Stock:: 925
On Order:: 2908
Enter Quantity:

Current price of IPP086N10N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.50~~; ~~$1.50~~

10: ~~$1.28~~; ~~$12.80~~

100: ~~$1.02~~; ~~$102.00~~

500: ~~$0.90~~; ~~$448.50~~

1000: ~~$0.74~~; ~~$744.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPP086N10N3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes