IRF1310NPBF

Mfr. #:: IRF1310NPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFT 100V 42A 36mOhm 73.3nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF1310NPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 42 A

Rds On - Drain-Source Resistance:: 36 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 73.3 nC

Pd - Power Dissipation:: 160 W

Configuration:: Single

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Width:: 4.4 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Part # Aliases:: SP001553864

Unit Weight:: 0.211644 oz

Tags: IRF1310NP, IRF1310N, IRF1310, IRF131, IRF13, IRF1, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF1310NPBF Description

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-220AB;PD 160W;VGS +/-20V

***ure Electronics: Single N-Channel 100 V 0.036 Ohm 110 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W

***nsix Microsemi: Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:100V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg

***ure Electronics: Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3

***fin: Transistor NPN Mos IRF540/IRF540N INTERNATIONAL RECTIFIER Ampere=28 V=100 TO220

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ow.cn: Trans MOSFET N-CH Si 100V 33A 3-Pin(3+Tab) TO-220AB Full-Pak Tube

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):44mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 130 W

***nsix Microsemi: Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

*** Electronics: 100V 33A RDSON 44mOHM TO- 220AB IR IRF540N Interna tional Rectifier Descrip tion: MOSFET; N-Channel; 100 V (Min.); 33 A (Max.) ; 130 W (Max.); 11 ns (Ty p.)

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;TO-220AB;PD 92W;gFS 36V

*** Source Electronics: Trans MOSFET N-CH Si 100V 36A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 100V 36A TO-220AB

***ure Electronics: Single N-Channel 100 V 26.5 mOhm 42 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 92 W

*** Stop Electro: Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: N Channel Mosfet, 100V, 36A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:36A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF540ZPBF.

***ment14 APAC: MOSFET, N, 100V, 36A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:100V; On Resistance Rds(on):26.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:92W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:36A; Junction to Case Thermal Resistance A:1.64°C/W; On State resistance @ Vgs = 10V:26.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:92W; Power Dissipation Pd:92W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***et: Trans MOSFET N-CH 100V 44A 3-Pin(3+Tab) TO-220AB Rail

***ser: MOSFETs 44a, 100V, 0.030 Ohm N-Ch MOSFET

***ter Electronics: PWR MOS ULTRAFET 100V/41A/0.030 OHM N-CH

***ser: MOSFETs 44a, 100V, 0.030 Ohm N-Ch MOSFET

***i-Key: MOSFET N-CH 100V 44A TO-220AB

***i-Key Marketplace: MOSFET N-CH 100V 44A TO220-3

***Yang: PWR MOS ULTRAFET 100V/41A/0.030 OHM N-CH - Bulk

***el Nordic: Contact for details

***emi: Power MOSFET, N-Channel, QFET®, 100 V, 43.5 A, 39 mΩ, TO-220

***et: Trans MOSFET N-CH 100V 43.5A 3-Pin(3+Tab) TO-220AB Rail

***r Electronics: Power Field-Effect Transistor, 43.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 100V, 43.5A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 43.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***et: TO-220AB, SINGLE, N-CH, 100V, 36MOHM ULTRAFET TRENCH MOSFET

***ure Electronics: N-Channel 100 V 36 mOhm PowerTrench Mosfet - TO-220AB

***emi: N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: TO-220 Polarity: N Power dissipation: 95 W

***p One Stop Global: Trans MOSFET N-CH 100V 6A 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Power Field-Effect Transistor, 6A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:100V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:95W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:32A; Package / Case:TO-220AB; Power Dissipation Pd:95W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Market price

Part #	Mfg.	Description	Stock	Price
IRF1310NPBF DISTI # V99:2348_13891264	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB Tube	415	10000:$0.6162 5000:$0.6400 2500:$0.6627 1000:$0.6851 500:$0.8357 100:$0.9539 10:$1.1605 1:$1.3340
IRF1310NPBF DISTI # IRF1310NPBF-ND	Infineon Technologies AG	MOSFET N-CH 100V 42A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	717In Stock	1000:$0.9327 500:$1.1051 100:$1.3925 10:$1.7080 1:$1.8800
IRF1310NPBF DISTI # 17418323	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB Tube	11025	10000:$0.4716 5000:$0.4847 2500:$0.4986 1000:$0.5132 500:$0.5288 250:$0.5453 100:$0.5629 21:$0.5817
IRF1310NPBF DISTI # 31016808	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB Tube	415	100:$0.9539 11:$1.1605
IRF1310NPBF DISTI # IRF1310NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB (Alt: IRF1310NPBF) RoHS: Compliant Min Qty: 1000	Asia - 1000	1000:$0.6166 2000:$0.5913 3000:$0.5833 5000:$0.5605 10000:$0.5534 25000:$0.5395 50000:$0.5264
IRF1310NPBF DISTI # IRF1310NPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1310NPBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 3193	1:$1.2919 10:$1.1289 25:$1.1269 50:$1.1239 100:$0.9239 500:$0.7949 1000:$0.7349
IRF1310NPBF DISTI # SP001553864	Infineon Technologies AG	Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-220AB (Alt: SP001553864) RoHS: Compliant Min Qty: 1	Europe - 5680	1:€0.9259 10:€0.8269 25:€0.8249 50:€0.8229 100:€0.7219 500:€0.6459 1000:€0.5679
IRF1310NPBF DISTI # 19K8200	Infineon Technologies AG	N CHANNEL MOSFET, 100V, 42A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:42A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.036ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes	129	1:$1.5400 10:$1.3100 100:$1.0500 500:$0.9150 1000:$0.8160 2500:$0.7700 5000:$0.7560
IRF1310NPBF DISTI # 97K2081	Infineon Technologies AG	MOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:41A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.036ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:170W,RoHS Compliant: Yes	265	1:$1.7000 10:$1.4600 100:$1.2000 500:$1.0600 1000:$0.9540 2500:$0.9070 5000:$0.8920
IRF1310NPBF. DISTI # 26AC0572	Infineon Technologies AG	N CHANNEL MOSFET, 100V, 42A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:42A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.036ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes	0	1:$1.5700 10:$1.3400 100:$1.0700 500:$0.9150 1000:$0.8160 2500:$0.7700 5000:$0.7560
IRF1310NPBF DISTI # 70016939	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 0.036Ohm,ID 42A,TO-220AB,PD 160W,VGS +/-20V RoHS: Compliant	0	1:$1.5950 10:$1.4080 100:$1.2270 500:$1.0640 1000:$0.9380
IRF1310NPBF	International Rectifier	RoHS: Not Compliant	637	1000:$0.6800 500:$0.7200 100:$0.7500 25:$0.7800 1:$0.8400
IRF1310NPBF DISTI # 5411506	Infineon Technologies AG	MOSFET N-CHANNEL 100V 42A TO220AB, EA	1139	1:£2.0000 10:£0.7300 25:£0.6700
IRF1310NPBF DISTI # IRF1310NPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,42A,160W,TO220AB	1450	1:$0.9900 3:$0.8900 10:$0.7300 100:$0.6300
IRF1310NPBF DISTI # IRF1310NPBF	Infineon Technologies AG	N-Ch 100V 42A 160W 0,036R TO220AB RoHS: Compliant	1010	10:€0.7575 50:€0.5175 200:€0.4575 500:€0.4405
IRF1310NPBF DISTI # TMOSP11697	Infineon Technologies AG	N-CH 100V 42A 36mOhm TO220-3 RoHS: Compliant	Stock DE - 150Stock US - 0	50:$0.7998 150:$0.7540 300:$0.7083 650:$0.6398 1000:$0.6169
IRF1310NPBF DISTI # 9103023	Infineon Technologies AG	MOSFET, N, TO-220 RoHS: Compliant	394	5:£0.7450 25:£0.6830 100:£0.6490 250:£0.6140 500:£0.5800
IRF1310NPBF DISTI # XSLY00000000709	Infineon Technologies AG	TO-220AB RoHS: Compliant	6228	900:$0.7857 6228:$0.7333
IRF1310NPBF DISTI # XSKDRABS0006637	Infineon Technologies AG	RoHS: Compliant	4068	1000:$0.8610 4068:$0.8036
IRF1310NPBF DISTI # 9103023	Infineon Technologies AG	MOSFET, N, TO-220 RoHS: Compliant	394	1:$2.4400 10:$2.0700 100:$1.6600 500:$1.4500 1000:$1.2000 2000:$1.1200 5000:$1.0800 10000:$1.0400
IRF1310NPBF DISTI # C1S322000479014	Infineon Technologies AG	MOSFETs RoHS: Compliant	11042	1000:$0.7570 500:$0.8180 100:$0.9110 50:$1.0800 25:$1.2100 5:$1.6700

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IRF1310NPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes