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FDMS86181

FDMS86181
Mfr. #:
FDMS86181
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 100V/20V N-Chnl Power Trench MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
FDMS86181 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FDMS86181 more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
Power-56-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
124 A
Rds On - Drain-Source Resistance:
12 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
42 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
125 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
PowerTrench
Packaging:
Reel
Height:
1.1 mm
Length:
6 mm
Product:
Power MOSFETs
Series:
FDMS86181
Type:
PowerTrench
Width:
5 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
116 S
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
9 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
25 ns
Typical Turn-On Delay Time:
17 ns
Unit Weight:
0.003175 oz
Tags
FDMS8618, FDMS861, FDMS86, FDMS8, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN ON Semiconductor FDMS86181
***Semiconductor
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ
***ure Electronics
N-Channel 100 V 4.2 mOhm 42 nC SMT Shielded Gate PowerTrench Mosfet - Power56
***et
Trans MOSFET N-CH 100V 44A 8-Pin Power56 T/R
***an P&S
N-CH Shielded Gate PowerTrench MOSFET
***et Europe
NM1 100V/20V NCH POWER TRENCH MOSFET
***ical
Trans MOSFET N-CH 100V 44A
***i-Key
MOSFET N-CH 100V POWER56
***ark
Mosfet, N-Ch, 100V, 124A, Power56-8; Transistor Polarity:n Channel; Continuous Drain Current Id:124A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0033Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power Rohs Compliant: Yes
***rchild Semiconductor
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 124A, POWER56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:124A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power Dissipation Pd:125W; Transistor Case Style:Power 56; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:Trench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CANALE N, 100V 124A, POWER56-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:124A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0033ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.1V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:Power 56; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:Trench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
Shielded Gate PowerTrench® MOSFETs
ON Semiconductor Shielded Gate PowerTrench® MOSFETs are 100V N-channel MV MOSFETs developed using an advanced PowerTrench® process that integrates Shielded Gate Technology. These MOSFETs minimize on-state resistance (RDSON) and reverse recovery charge (Qrr) to deliver superior switching performance and efficiency. The small gate charge (QG), small reverse recovery charge (Qrr), and Figure of Merit (FOM) ensure fast switching for synchronous rectification applications. These device have little to no voltage overshoot, reduces voltage ringing, and lowers EMI for applications requiring a 100V-rated MOSFET such as power supplies and motor drives. In addition these MOSFET's increased power density allows wider MOSFET de-rating. These devices are 100% UIL tested and is available in a MSL1 robust package design.Learn More
Part # Mfg. Description Stock Price
FDMS86181
DISTI # V36:1790_14140389		ON SemiconductorTrans MOSFET N-CH 100V 44A 8-Pin Power 56 EP T/R0
    FDMS86181
    DISTI # V72:2272_14140389    		ON SemiconductorTrans MOSFET N-CH 100V 44A 8-Pin Power 56 EP T/R0
      FDMS86181
      DISTI # FDMS86181TR-ND      		ON SemiconductorMOSFET N-CH 100V 44A POWER56
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		On Order
      • 6000:$1.3696
      • 3000:$1.3867
      FDMS86181
      DISTI # FDMS86181CT-ND      		ON SemiconductorMOSFET N-CH 100V 44A POWER56
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		Temporarily Out of Stock
      • 1000:$1.4812
      • 500:$1.7563
      • 100:$2.0632
      • 10:$2.5180
      • 1:$2.8000
      FDMS86181
      DISTI # FDMS86181DKR-ND      		ON SemiconductorMOSFET N-CH 100V 44A POWER56
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Temporarily Out of Stock
      • 1000:$1.4812
      • 500:$1.7563
      • 100:$2.0632
      • 10:$2.5180
      • 1:$2.8000
      FDMS86181
      DISTI # FDMS86181      		ON SemiconductorNM1 100V/20V NCH POWER TRENCH MOSFET - Tape and Reel (Alt: FDMS86181)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 3000:$1.1900
      • 6000:$1.1900
      • 12000:$1.1900
      • 18000:$1.1900
      • 30000:$1.1900
      FDMS86181
      DISTI # 01AC8567      		ON SemiconductorFET 100V 4.2 MOHM PQFN56 / REEL0
      • 5000:$1.2800
      • 2500:$1.3100
      • 1000:$1.6300
      • 500:$1.8100
      • 100:$1.9600
      • 10:$2.4400
      • 1:$2.8700
      FDMS86181
      DISTI # 512-FDMS86181      		ON SemiconductorMOSFET 100V/20V N-Chnl Power Trench MOSFET
      RoHS: Compliant      		0
      • 1:$2.8700
      • 10:$2.4400
      • 100:$1.9500
      • 500:$1.7100
      • 1000:$1.4100
      • 3000:$1.3200
      FDMS86181
      DISTI # 2781483      		ON SemiconductorMOSFET, N-CH, 100V, 124A, POWER56-8
      RoHS: Compliant      		0
      • 1000:$2.3800
      • 500:$2.8200
      • 100:$3.4700
      • 10:$4.2400
      • 1:$4.7400
      FDMS86181
      DISTI # 2781483      		ON SemiconductorMOSFET, N-CH, 100V, 124A, POWER56-80
      • 500:£1.3100
      • 250:£1.4100
      • 100:£1.5000
      • 10:£1.8800
      • 1:£2.4900
      FDMS86181ON Semiconductor 0
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        Availability
        Stock:
        Available
        On Order:
        5000
        Enter Quantity:
        Current price of FDMS86181 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $2.87
        $2.87
        10
        $2.44
        $24.40
        100
        $1.95
        $195.00
        500
        $1.71
        $855.00
        1000
        $1.41
        $1 410.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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