GA10JT12-247

Mfr. #:: GA10JT12-247
Manufacturer:: GeneSiC Semiconductor
Description:: MOSFET 1200V 25A Standard
Lifecycle:: New from this manufacturer.
Datasheet:: GA10JT12-247 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: GeneSiC Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: SiC

Mounting Style:: Through Hole

Package / Case:: TO-247-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 1.2 kV

Id - Continuous Drain Current:: 25 A

Rds On - Drain-Source Resistance:: 100 mOhms

Qg - Gate Charge:: 55 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 170 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Series:: GA10JT12

Transistor Type:: 1 N-Channel

Brand:: GeneSiC Semiconductor

Fall Time:: 9 ns

Product Type:: MOSFET

Rise Time:: 9 ns

Factory Pack Quantity:: 30

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 22 ns

Typical Turn-On Delay Time:: 9 ns

Unit Weight:: 0.503113 oz

Tags: GA10, GA1

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

GA10JT12-247 Description

***el Electronic: GENESIC SEMICONDUCTOR GA10JT12-247SIC JUNCTION TRANSISTOR, 1.2KV, 10A, TO-247AB

***eSiC Semiconductor: SiC Junction Transistor 1200V 180mΩ TO-263-10

***ark: Sic Junction Transistor, 1.2Kv, 10A, To-247Ab; Mosfet Module Configuration:single; Channel Type:n Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:3Pins; Rds(On) Test Voltage:-; Product Range:- Rohs Compliant: Yes

GA10JT12-247

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes