NILMS4501NR2

Mfr. #:: NILMS4501NR2
Manufacturer:: ON Semiconductor
Description:: MOSFET 24V 9.5A N-Channel
Lifecycle:: New from this manufacturer.
Datasheet:: NILMS4501NR2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NILMS4501NR2 Datasheet NILMS4501NR2 Datasheet (P4-P6)NILMS4501NR2 Datasheet (P7-P9)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: N

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: QFN-4

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 24 V

Id - Continuous Drain Current:: 9.5 A

Rds On - Drain-Source Resistance:: 12 mOhms

Vgs - Gate-Source Voltage:: 10 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 2.7 W

Configuration:: Dual

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 1.9 mm

Length:: 6.2 mm

Transistor Type:: 2 N-Channel

Type:: MOSFET

Width:: 5.2 mm

Brand:: ON Semiconductor

Forward Transconductance - Min:: 23 S

Fall Time:: 6 ns, 6.5 ns

Product Type:: MOSFET

Rise Time:: 15 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 17 ns, 22.5 ns

Typical Turn-On Delay Time:: 12 ns, 8.5 ns

Tags: NIL

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NILMS4501NR2 Description

***emi: Power MOSFET with Current Mirror FET 24 V, 9.5 A, N-Channel, ESD Protected, 1:250 Current Mirror

***ser: MOSFETs- Protected 24V 9.5A N-Channel No-Cancel/No-Return

***r Electronics: Power Field-Effect Transistor, 9.5A I(D), 24V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 20V 10.5A Automotive 6-Pin DFN EP T/R

***(Formerly Allied Electronics): MOSFET; N Channel; Trans; 20V 10.5A DFN6 EP

***des Inc SCT: N-Channel Mosfet, 20V VDS, 12±V VGS

***S: French Electronic Distributor since 1988

***ure Electronics: Dual N-Channel 20 V 28 mOhm 16 nC 0.8 W Silicon Surface Mount Mosfet - UFDFN-6

***et Europe: Transistor MOSFET Array Dual N-CH 20V 9.3A 6-Pin uDFN2030 T/R

*** Source Electronics: MOSFET 2N-CH 20V 9A 6-UDFN / DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

***(Formerly Allied Electronics): MOSFET Dual N-Channel 20V 9A U-DFN2030-6

***ical: Trans MOSFET N-CH 20V 9A 6-Pin UDFN EP T/R

***des Inc SCT: N-Channel Mosfet, 20V VDS, 12±V VGS

***ical: Trans MOSFET N-CH 20V 10.5A Automotive 6-Pin DFN EP T/R

***des Inc SCT: N-Channel Mosfet, 20V VDS, 8±V VGS

***ark: Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:10.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.1V; Power Dissipation:660mW; No. of Pins:6PinsRoHS Compliant: No

***emi: Power MOSFET 30 V, High Side 18 A / Low Side 23 A, Dual N-Channel SO8FL

***et: Transistor MOSFET Array Dual N-CH 30V 1.35A/17.5A 8-Pin DFN T/R

***ark: Power Mosfet 30V 18A 6.5 Mohm Dual N-Channel So-8Fl With Schottky Diode / Reel

***Yang: Transistor MOSFET Array Dual N-Channel 20V 6A 8-Pin Micro LL T/R - Tape and Reel

***emi: Power MOSFET 20V 9A 26 mOhm Dual N-Channel Micro8 Leadless

***-Wing Technology: Tape & Reel (TR) Surface Mount 2N-Channel (Dual) COMMON DRAIN 2ELEMENTS WITH BUILT-IN DIODE AND RESISTOR Mosfet Array 18nC @ 4.5V 6A 1.5W 1.17ns

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:6A; On Resistance, Rds(on):21mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:0.67V ;RoHS Compliant: Yes

***ser: MOSFETs- Power and Small Signal NFET 3X3 20V 3.0A FETKY T

***ponent Stockers USA: 2.8 A 20 V 0.09 ohm N-CHANNEL Si POWER MOSFET

***r Electronics: Power Field-Effect Transistor, 2.8A I(D), 20V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Market price

Part #	Mfg.	Description	Stock	Price
NILMS4501NR2 DISTI # NILMS4501NR2-ND	ON Semiconductor	MOSFET N-CH 24V 9.5A 4-LLP RoHS: Not compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
NILMS4501NR2G DISTI # NILMS4501NR2GOSTR-ND	ON Semiconductor	MOSFET N-CH 24V 9.5A 4-LLP RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
NILMS4501NR2G DISTI # NILMS4501NR2GOSCT-ND	ON Semiconductor	MOSFET N-CH 24V 9.5A 4-LLP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
NILMS4501NR2 DISTI # 863-NILMS4501NR2	ON Semiconductor	MOSFET 24V 9.5A N-Channel RoHS: Not compliant	0
NILMS4501NR2	ON Semiconductor	Power Field-Effect Transistor, 9.5A I(D), 24V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	4943	1000:$0.9200 500:$0.9700 100:$1.0100 25:$1.0500 1:$1.1300
NILMS4501NR2G	ON Semiconductor		1764

NILMS4501NR2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes