SI4618DY-T1-GE3

SI4618DY-T1-GE3
Mfr. #:
SI4618DY-T1-GE3
Manufacturer:
Vishay
Description:
RF Bipolar Transistors MOSFET 30V 8/15.2A DUAL NCH MOSFET w/Shottky
Lifecycle:
New from this manufacturer.
Datasheet:
SI4618DY-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4618DY-T1-GE3 DatasheetSI4618DY-T1-GE3 Datasheet (P4-P6)SI4618DY-T1-GE3 Datasheet (P7-P9)SI4618DY-T1-GE3 Datasheet (P10-P12)SI4618DY-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Vishay Siliconix
Product Category
FETs - Arrays
Series
TrenchFETR
Packaging
Tape & Reel (TR)
Part-Aliases
SI4618DY-GE3
Unit-Weight
0.017870 oz
Mounting-Style
SMD/SMT
Package-Case
8-SOIC (0.154", 3.90mm Width)
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
2 Channel
Supplier-Device-Package
8-SO
Configuration
Dual
FET-Type
2 N-Channel (Half Bridge)
Power-Max
1.98W, 4.16W
Transistor-Type
2 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Input-Capacitance-Ciss-Vds
1535pF @ 15V
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
8A, 15.2A
Rds-On-Max-Id-Vgs
17 mOhm @ 8A, 10V
Vgs-th-Max-Id
2.5V @ 1mA
Gate-Charge-Qg-Vgs
44nC @ 10V
Pd-Power-Dissipation
2.35 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Vgs-Gate-Source-Voltage
16 V
Id-Continuous-Drain-Current
8 A 15.2 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistance
17 mOhms 10 mOhms
Transistor-Polarity
N-Channel
Qg-Gate-Charge
29 nC 39 nC
Forward-Transconductance-Min
40 S 47 S
Tags
SI4618DY-T, SI4618D, SI4618, SI461, SI46, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 6.7A/11.4A 8-Pin SOIC N T/R
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, NN CH, SCH DIODE, 30V, SO8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.98W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.014ohm; Power Dissipation Pd:1.98W
Part # Mfg. Description Stock Price
SI4618DY-T1-GE3
DISTI # SI4618DY-T1-GE3-ND
Vishay SiliconixMOSFET 2N-CH 30V 8A 8SO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
  • 2500:$1.1286
SI4618DY-T1-GE3
DISTI # 65T1698
Vishay IntertechnologiesMOSFET Transistor, N Channel, 8 A, 30 V, 0.014 ohm, 10 V, 1 V0
  • 1:$1.2800
  • 1000:$1.2000
  • 2000:$1.1400
  • 4000:$1.0300
  • 6000:$0.9880
  • 10000:$0.9500
SI4618DY-T1-GE3
DISTI # 781-SI4618DY-T1-GE3
Vishay IntertechnologiesMOSFET 30V Vds 16V Vgs SO-8
RoHS: Compliant
0
    SI4618DY-T1-GE3Vishay Intertechnologies 2491
      SI4618DYT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant
      Europe - 2500
        SI4618DY-T1-GE3
        DISTI # 2056724
        Vishay IntertechnologiesMOSFET, NN CH, SCH DIODE, 30V, SO8
        RoHS: Compliant
        0
        • 1:$3.6400
        • 10:$3.0200
        • 100:$2.3400
        • 500:$2.0500
        • 1000:$1.7100
        • 2500:$1.5800
        • 5000:$1.5200
        • 10000:$1.4600
        Image Part # Description
        SI4618DY-T1-E3

        Mfr.#: SI4618DY-T1-E3

        OMO.#: OMO-SI4618DY-T1-E3

        MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3
        SI4618DY-T1-E3

        Mfr.#: SI4618DY-T1-E3

        OMO.#: OMO-SI4618DY-T1-E3-VISHAY

        MOSFET 2N-CH 30V 8A 8-SOIC
        SI4618DY-T1-GE3

        Mfr.#: SI4618DY-T1-GE3

        OMO.#: OMO-SI4618DY-T1-GE3-VISHAY

        RF Bipolar Transistors MOSFET 30V 8/15.2A DUAL NCH MOSFET w/Shottky
        SI4618DY

        Mfr.#: SI4618DY

        OMO.#: OMO-SI4618DY-1190

        New and Original
        SI4618DY-T1

        Mfr.#: SI4618DY-T1

        OMO.#: OMO-SI4618DY-T1-1190

        New and Original
        SI4618DY-T1-23

        Mfr.#: SI4618DY-T1-23

        OMO.#: OMO-SI4618DY-T1-23-1190

        New and Original
        Availability
        Stock:
        Available
        On Order:
        3000
        Enter Quantity:
        Current price of SI4618DY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $1.42
        $1.42
        10
        $1.35
        $13.54
        100
        $1.28
        $128.25
        500
        $1.21
        $605.65
        1000
        $1.14
        $1 140.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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