CGH55030F2

CGH55030F2
Mfr. #:
CGH55030F2
Manufacturer:
N/A
Description:
RF JFET Transistors GaN HEMT 4.5-6.0GHz, 25 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CGH55030F2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CGH55030F2 more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN
Gain:
12 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
120 V
Vgs - Gate-Source Breakdown Voltage:
- 10 V to 2 V
Id - Continuous Drain Current:
3 A
Output Power:
25 W
Maximum Drain Gate Voltage:
-
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
-
Mounting Style:
Screw Mount
Package / Case:
440166
Packaging:
Tray
Application:
-
Configuration:
Single
Height:
3.43 mm
Length:
14.09 mm
Operating Frequency:
4.5 GHz to 6 GHz
Operating Temperature Range:
-
Product:
GaN HEMT
Width:
4.19 mm
Brand:
Wolfspeed / Cree
Forward Transconductance - Min:
-
Gate-Source Cutoff Voltage:
-
Class:
-
Fall Time:
-
NF - Noise Figure:
-
P1dB - Compression Point:
-
Product Type:
RF JFET Transistors
Rds On - Drain-Source Resistance:
-
Rise Time:
-
Factory Pack Quantity:
60
Subcategory:
Transistors
Typical Turn-Off Delay Time:
-
Vgs th - Gate-Source Threshold Voltage:
- 3 V
Tags
CGH55030F2, CGH55030F, CGH5503, CGH55, CGH5, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 28V 440166
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Part # Mfg. Description Stock Price
CGH55030F2
DISTI # CGH55030F2-ND
WolfspeedRF MOSFET HEMT 28V 440166
RoHS: Compliant
Min Qty: 1
Container: Tray
194In Stock
  • 1:$117.3000
CGH55030F2
DISTI # 941-CGH55030F2
Cree, Inc.RF JFET Transistors GaN HEMT 4.5-6.0GHz, 25 Watt
RoHS: Compliant
69
  • 1:$114.4400
CGH55030F2
DISTI # CGH55030F2
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
38
  • 1:$121.8700
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Availability
Stock:
Available
On Order:
4500
Enter Quantity:
Current price of CGH55030F2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$114.44
$114.44
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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