IPP60R040C7XKSA1

IPP60R040C7XKSA1
Mfr. #:
IPP60R040C7XKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET HIGH POWER_NEW
Lifecycle:
New from this manufacturer.
Datasheet:
IPP60R040C7XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPP60R040C7XKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Vds - Drain-Source Breakdown Voltage:
600 V
Tradename:
CoolMOS
Packaging:
Tube
Height:
15.65 mm
Length:
10 mm
Series:
CoolMOS C7
Width:
4.4 mm
Brand:
Infineon Technologies
Product Type:
MOSFET
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Part # Aliases:
IPP60R040C7 SP001277604
Unit Weight:
0.211644 oz
Tags
IPP60R0, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 40 mOhm 107 nC CoolMOS™ Power Mosfet - TO-220-3
***ark
Mosfet, N-Ch, 600V, 50A, To-220-3; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Part # Mfg. Description Stock Price
IPP60R040C7XKSA1
DISTI # V99:2348_06377980
Infineon Technologies AGTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
82
  • 500:$7.3440
  • 100:$8.5850
  • 25:$9.9290
  • 10:$10.4030
  • 1:$11.5060
IPP60R040C7XKSA1
DISTI # V36:1790_06377980
Infineon Technologies AGTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
0
  • 500000:$5.6610
  • 250000:$5.6670
  • 50000:$6.6080
  • 5000:$8.6390
  • 500:$9.0000
IPP60R040C7XKSA1
DISTI # IPP60R040C7XKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V 50A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
41In Stock
  • 500:$7.9097
  • 100:$9.0833
  • 25:$10.4612
  • 10:$10.9710
  • 1:$12.1500
IPP60R040C7XKSA1
DISTI # 26197351
Infineon Technologies AGTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
82
  • 1:$11.5060
IPP60R040C7XKSA1
DISTI # 21776052
Infineon Technologies AGTrans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
54
  • 2:$6.0872
IPP60R040C7XKSA1
DISTI # SP001277604
Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001277604)
RoHS: Compliant
Min Qty: 1
Europe - 450
  • 1000:€5.2900
  • 500:€5.6900
  • 100:€5.8900
  • 50:€6.1900
  • 25:€6.3900
  • 10:€6.6900
  • 1:€7.2900
IPP60R040C7XKSA1
DISTI # IPP60R040C7XKSA1
Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPP60R040C7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 5000:$6.0900
  • 3000:$6.1900
  • 2000:$6.4900
  • 1000:$6.6900
  • 500:$6.9900
IPP60R040C7XKSA1
DISTI # IPP60R040C7XKSA1
Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Bulk (Alt: IPP60R040C7XKSA1)
RoHS: Compliant
Min Qty: 57
Container: Bulk
Americas - 0
  • 570:$5.5900
  • 285:$5.6900
  • 171:$5.8900
  • 114:$6.0900
  • 57:$6.2900
IPP60R040C7XKSA1
DISTI # IPP60R040C7
Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPP60R040C7)
RoHS: Compliant
Min Qty: 500
Asia - 0
  • 25000:$6.1519
  • 12500:$6.2308
  • 5000:$6.3117
  • 2500:$6.3947
  • 1500:$6.5676
  • 1000:$6.7500
  • 500:$6.9429
IPP60R040C7XKSA1
DISTI # 13AC9079
Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes382
  • 500:$7.6200
  • 250:$8.3500
  • 100:$8.7500
  • 50:$9.4100
  • 25:$10.0700
  • 10:$10.5500
  • 1:$11.6900
IPP60R040C7XKSA1
DISTI # 726-IPP60R040C7XKSA1
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
0
  • 1:$11.5700
  • 10:$10.4500
  • 25:$9.9700
  • 100:$8.6600
  • 250:$8.2700
  • 500:$7.5400
  • 1000:$6.5700
IPP60R040C7XKSA1Infineon Technologies AG 
RoHS: Not Compliant
7
  • 1000:$5.8400
  • 500:$6.1500
  • 100:$6.4000
  • 25:$6.6800
  • 1:$7.1900
IPP60R040C7XKSA1
DISTI # IPP60R040C7
Infineon Technologies AGN-Ch 600V 50A 227W 0,04R TO220
RoHS: Compliant
0
  • 1:€15.0500
  • 10:€9.0500
  • 50:€7.0500
  • 100:€6.4600
IPP60R040C7XKSA1
DISTI # 2726065
Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-220-3
RoHS: Compliant
382
  • 500:$11.9200
  • 100:$13.6900
  • 25:$15.7700
  • 10:$16.5400
  • 1:$18.3100
IPP60R040C7XKSA1
DISTI # 2726065
Infineon Technologies AGMOSFET, N-CH, 600V, 50A, TO-220-3367
  • 100:£6.2800
  • 50:£6.7500
  • 10:£7.2300
  • 5:£8.3800
  • 1:£9.3700
Image Part # Description
UCC5350SBDR

Mfr.#: UCC5350SBDR

OMO.#: OMO-UCC5350SBDR

Gate Drivers 5A/5A, 3-kVRMS Single-Channel
FDN337N

Mfr.#: FDN337N

OMO.#: OMO-FDN337N

MOSFET SSOT-3 N-CH 30V
LTM4619EV#PBF

Mfr.#: LTM4619EV#PBF

OMO.#: OMO-LTM4619EV-PBF

Switching Voltage Regulators Dual 26V, 4A Step-down Module Regulator with Tracking
LQH2MPZ1R5NGRL

Mfr.#: LQH2MPZ1R5NGRL

OMO.#: OMO-LQH2MPZ1R5NGRL

Fixed Inductors 0806 1.5uH 30% 1330mA AEC-Q200
GRM188R60J226MEA0D

Mfr.#: GRM188R60J226MEA0D

OMO.#: OMO-GRM188R60J226MEA0D-MURATA-ELECTRONICS

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 22uF 6.3volts X5R + - 20%
FSN-22A-20

Mfr.#: FSN-22A-20

OMO.#: OMO-FSN-22A-20-488

FFC / FPC Jumper Cables 2" 20 CONDUCTOR .100 Nomex
FDN337N

Mfr.#: FDN337N

OMO.#: OMO-FDN337N-ON-SEMICONDUCTOR

MOSFET N-CH 30V 2.2A SSOT3
GRM033R60J105ME11D

Mfr.#: GRM033R60J105ME11D

OMO.#: OMO-GRM033R60J105ME11D-MURATA-ELECTRONICS

Cap Ceramic 1uF 6.3V X5R 20% Pad SMD 0201 85C T/R
C4532X7R1E226M250KC

Mfr.#: C4532X7R1E226M250KC

OMO.#: OMO-C4532X7R1E226M250KC-TDK

Multilayer Ceramic Capacitors MLCC - SMD/SMT 1812 22uF 25volts
UCC5350SBDR

Mfr.#: UCC5350SBDR

OMO.#: OMO-UCC5350SBDR-TEXAS-INSTRUMENTS

6A 3KVRMS SINGLE CH ISO DR 8V U
Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of IPP60R040C7XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$11.57
$11.57
10
$10.45
$104.50
25
$9.97
$249.25
100
$8.66
$866.00
250
$8.27
$2 067.50
500
$7.54
$3 770.00
1000
$6.57
$6 570.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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