We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: info@omo-ic.com
| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| BBY5802WE6127XT DISTI # BBY5802WE6127XTTR-ND | Infineon Technologies AG | DIODE TUNING 10V 20MA SCD-80 RoHS: Compliant Min Qty: 8000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BBY 58-02W E6327 DISTI # BBY58-02WE6327-ND | Infineon Technologies AG | DIODE TUNING 10V 20MA SCD-80 RoHS: Compliant Min Qty: 15000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BBY5802WH6327XTSA1 DISTI # BBY5802WH6327XTSA1TR-ND | Infineon Technologies AG | DIODE TUNING 10V 20MA SCD80 RoHS: Compliant Min Qty: 15000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BBY58-02W E6327 DISTI # BBY58-02W E6327 | Infineon Technologies AG | - Bulk (Alt: BBY58-02W E6327) Min Qty: 6250 Container: Bulk | Americas - 0 |
|
| BBY 58-02W E6327 DISTI # 726-BBY5802WE6327 | Infineon Technologies AG | Varactor Diodes Silicon Tuning Diode RoHS: Compliant | 0 | |
| BBY 58-02W H6327 DISTI # 726-BBY5802WH6327 | Infineon Technologies AG | Varactor Diodes RF DIODE RoHS: Compliant | 0 | |
| BBY 58-02W E6127 DISTI # 726-BBY5802WE6127 | Infineon Technologies AG | Varactor Diodes Silicon Tuning Diode RoHS: Compliant | 0 | |
| BBY58-02W E6327 | Infineon Technologies AG | RoHS: Not Compliant | 43 |
|
| BBY58-02WE6327 | Infineon Technologies AG | 30000 | ||
| BBY58-02WE6327 | Infineon Technologies AG | 1975 |
| |
| BBY58-02WE6327 | Infineon Technologies AG | 18.3 PF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, SCD-80, 2 PIN (Also Known As: BBY58-02W) | 638 |
|
| BBY58-02WE6327 | Infineon Technologies AG | 18.3 PF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, SCD-80, 2 PIN | 638 |
|
| BBY58-02WE6327 | Infineon Technologies AG | 18.3 PF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, SCD-80, 2 PIN | 1580 |
|
| BBY58-02WE6327 | Infineon Technologies AG | 18.3 PF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, SCD-80, 2 PIN (Also Known As: BBY58-02W) | 1580 |
|
| BBY58-02WE6327 | Infineon Technologies AG | 18.3 PF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, SCD-80, 2 PIN (Also Known As: BBY58-02W) | 24000 |
|
| BBY58-02WE6327 | Infineon Technologies AG | 18.3 PF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, SCD-80, 2 PIN | 24000 |
|
| BBY58-02WE6327 | Infineon Technologies AG | 12000 |
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: BBY-58-02V OMO.#: OMO-BBY-58-02V-1190 |
New and Original |
|
|
Mfr.#: BBY-58-02W OMO.#: OMO-BBY-58-02W-1190 |
New and Original |