IRFR9120NTRPBF

Mfr. #:: IRFR9120NTRPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET 20V -100V P-CH FET 480mOhms 18nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRFR9120NTRPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRFR9120NTRPBF Datasheet IRFR9120NTRPBF Datasheet (P4-P6)IRFR9120NTRPBF Datasheet (P7-P9)IRFR9120NTRPBF Datasheet (P10-P11)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 6.5 A

Rds On - Drain-Source Resistance:: 480 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 18 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 39 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 2.3 mm

Length:: 6.5 mm

Transistor Type:: 1 P-Channel

Type:: Preliminary

Width:: 6.22 mm

Brand:: Infineon Technologies

Fall Time:: 31 ns

Product Type:: MOSFET

Rise Time:: 47 ns

Factory Pack Quantity:: 2000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 28 ns

Typical Turn-On Delay Time:: 14 ns

Part # Aliases:: SP001557182

Unit Weight:: 0.139332 oz

Tags: IRFR9120NTRP, IRFR9120NT, IRFR9120N, IRFR9120, IRFR912, IRFR91, IRFR9, IRFR, IRF

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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Vacuum Packaging with PL

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IRFR9120NTRPBF Description

***eco: Transistor MOSFET P Channel 100 Volt 6.6 Amp 3 Pin 2+ Tab Dpak

***ure Electronics: Single P-Channel 100V 0.48 Ohm 27 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: -100V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***nell: MOSFET, P-CH, -100V, -6.6A, TO-252AA; Transistor Polarity: P Channel; Continuous Drain Current Id: -6.6A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.48ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs:

***roFlash: Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:6.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:40W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRFR9120NTRPBF.

***ure Electronics: ZXMN10A11K Series N-Channel 100 V 0.35 Ohm Power MOSFET Surface Mount- TO-252-3

***et: Trans MOSFET N-CH 100V 3.5A 3-Pin(2+Tab) DPAK T/R

***(Formerly Allied Electronics): MOSFET N-Channel 100V 3.5A DPAK | Diodes Inc ZXMN10A11KTC

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS

***ark: MOSFET, N, 100V, D-PAK ;ROHS COMPLIANT: YES

***nell: MOSFET, N, 100V, D-PAK; Transistor Polarity:N; Max Current Id:3.5A; Max Voltage Vds:100V; On State Resistance:0.35ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:4.06W; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:D-PAK; Case Style:DPAK; Cont Current Id:3.5A; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:100V; Typ Voltage Vgs th:4V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 100V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-252AA

***essParts.Net: INTERNATIONAL RECTIFIER IRFR120NTRPBF / MOSFET N-CH 100V 9.4A DPAK ESD IR

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ment14 APAC: MOSFET, N-CH, 100V, 9.4A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Source Voltage Vds:100V; On Resistance

***roFlash: Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: N Channel Mosfet, 100V, 9.4A, D-Pak; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFR120NTRPBF.

***nell: MOSFET, N-CH, 100V, 9.4A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.21ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 48W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: Single N-Channel 100 V 190 mOhm 6.9 nC HEXFET® Power Mosfet - TO-252AA

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***roFlash: Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Lighting LED

***nell: MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.7A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.19ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 35W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 8.7A; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V

***emi: N-Channel Logic Level UltraFET Power MOSFET 100V, 10A, 165mΩ

***ure Electronics: N-Channel 100 V 0.16 O Surface Mount Logic Level UltraFET Power Mosfet-TO-252AA

***r Electronics: Power Field-Effect Transistor, 10A I(D), 100V, 0.168ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: Mosfet, N-Ch, 100V, 12A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN10H170SK3-13

***p One Stop: Trans MOSFET N-CH 100V 12A Automotive 3-Pin(2+Tab) TO-252 T/R

***ure Electronics: N-Channel 100 V 140 mOhm Surface Mount Enhancement Mode Mosfet - TO-252-3

***nsix Microsemi: Power Field-Effect Transistor, 12A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: Mosfet, P-Ch, 100V, 2.4A, To-252 Rohs Compliant: Yes |Diodes Inc. ZXMP10A17KTC

***et: Trans MOSFET P-CH 100V 3.9A 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: MOSFET, P-CH, 100V, 2.4A, TO-252;

***S: French Electronic Distributor since 1988

***emi: N-Channel PowerTrench® MOSFET 100V, 6.8A, 160mΩ

***nell: MOSFET, N-CH, 100V, 6.8A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.124ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V

***SIT Distribution GmbH: Power Field-Effect Transistor, 6.8A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Market price

Part #	Mfg.	Description	Stock	Price
IRFR9120NTRPBF DISTI # 31222879	Infineon Technologies AG	Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	6000	4000:$0.2160 2000:$0.2208
IRFR9120NTRPBF DISTI # 30606216	Infineon Technologies AG	Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2000	500:$0.3493 200:$0.4131 100:$0.4220 50:$0.5049 34:$0.7573
IRFR9120NTRPBF DISTI # IRFR9120NPBFCT-ND	Infineon Technologies AG	MOSFET P-CH 100V 6.6A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1464In Stock	1000:$0.4075 500:$0.4995 100:$0.6604 10:$0.8450 1:$0.9600
IRFR9120NTRPBF DISTI # IRFR9120NPBFDKR-ND	Infineon Technologies AG	MOSFET P-CH 100V 6.6A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1464In Stock	1000:$0.4075 500:$0.4995 100:$0.6604 10:$0.8450 1:$0.9600
IRFR9120NTRPBF DISTI # IRFR9120NPBFTR-ND	Infineon Technologies AG	MOSFET P-CH 100V 6.6A DPAK RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	On Order	2000:$0.3622
IRFR9120NTRPBF DISTI # C1S322000494402	Infineon Technologies AG	Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R	2000	1000:$0.2660 500:$0.2740 200:$0.3240 100:$0.3310 50:$0.3960 10:$0.5940
IRFR9120NTRPBF DISTI # C1S322000494396	Infineon Technologies AG	Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R	6000	2000:$0.3340
IRFR9120NTRPBF DISTI # V72:2272_13891570	Infineon Technologies AG	Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	378	250:$0.2743 100:$0.3493 25:$0.4821 10:$0.4842 1:$0.5525
IRFR9120NTRPBF DISTI # IRFR9120NTRPBF	Infineon Technologies AG	Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R - Cut TR (SOS) (Alt: IRFR9120NTRPBF) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 1150	1:$0.2999 20:$0.2889 50:$0.2789 100:$0.2699 250:$0.2639 500:$0.2629 1000:$0.2629
IRFR9120NTRPBF DISTI # IRFR9120NTRPBF	Infineon Technologies AG	Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR9120NTRPBF) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 2000	2000:$0.2519 4000:$0.2519 8000:$0.2509 12000:$0.2509 20000:$0.2479
IRFR9120NTRPBF DISTI # IRFR9120NTRPBF	Infineon Technologies AG	Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R (Alt: IRFR9120NTRPBF) RoHS: Compliant Min Qty: 2000 Container: Tape and Reel	Asia - 2000	2000:$0.2550 4000:$0.2445 6000:$0.2412 10000:$0.2318 20000:$0.2288 50000:$0.2231 100000:$0.2177
IRFR9120NTRPBF DISTI # SP001557182	Infineon Technologies AG	Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R (Alt: SP001557182) RoHS: Compliant Min Qty: 2000 Container: Tape and Reel	Europe - 24000	2000:€0.2199 4000:€0.2149 8000:€0.2099 12000:€0.2099 20000:€0.2089
IRFR9120NTRPBF DISTI # 40M7907	Infineon Technologies AG	P CHANNEL MOSFET, -100V, 6.6A D-PAK,Transistor Polarity:P Channel,Continuous Drain Current Id:-6.6A,Drain Source Voltage Vds:-100V,On Resistance Rds(on):0.48ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V RoHS Compliant: Yes	1414	1:$0.8080 10:$0.6770 25:$0.6030 50:$0.5280 100:$0.4540 250:$0.4270 500:$0.4000 1000:$0.3730
IRFR9120NTRPBF. DISTI # 26AC0557	Infineon Technologies AG	Transistor Polarity:P Channel,Continuous Drain Current Id:-6.6A,Drain Source Voltage Vds:-100V,On Resistance Rds(on):0.48ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V,Power Dissipation Pd:40W,No. of Pins:3Pins RoHS Compliant: Yes	0	1:$0.2740 2000:$0.2720 4000:$0.2690 8000:$0.2670 12000:$0.2640
IRFR9120NTRPBF DISTI # 70017790	Infineon Technologies AG	MOSFET,Power,P-Ch,VDSS -100V,RDS(ON) 0.48Ohm,ID -6.6A,D-Pak (TO-252AA),PD 40W RoHS: Compliant	0	2000:$0.4660
IRFR9120NTRPBF	Infineon Technologies AG	Single P-Channel 100 V 0.48 Ohm 27 nC HEXFET Power Mosfet - TO-252-3 RoHS: Compliant	10000Reel	2000:$0.2550
IRFR9120NTRPBF DISTI # 942-IRFR9120NTRPBF	Infineon Technologies AG	MOSFET 20V -100V P-CH FET 480mOhms 18nC RoHS: Compliant	32315	1:$0.7600 10:$0.6290 100:$0.4060 1000:$0.3250 2000:$0.2740 10000:$0.2640 24000:$0.2540
IRFR9120NTRPBF	International Rectifier	RoHS: Not Compliant	1150	1000:$0.2600 500:$0.2800 100:$0.2900 25:$0.3000 1:$0.3200
IRFR9120NTRPBF DISTI # 8274082	Infineon Technologies AG	HEXFET P-CH MOSFET 6.6A 100V DPAK, PK	240	20:£0.4640 100:£0.3950 500:£0.3480 1000:£0.3020 2000:£0.2960
IRFR9120NTRPBF DISTI # 8274082P	Infineon Technologies AG	HEXFET P-CH MOSFET 6.6A 100V DPAK, RL	1020	100:£0.3950 500:£0.3480 1000:£0.3020 2000:£0.2960
IRFR9120NTRPBF	International Rectifier	MOSFET Transistor, P-Channel, TO-252AA	100	39:$0.3948 9:$0.5264 1:$0.6580
IRFR9120NTRPBF	International Rectifier		3417
IRFR9120NTRPBF	Infineon Technologies AG	INSTOCK	1736
IRFR9120NTRPBF DISTI # XSLY00000001036	INFINEON/IR	D-PAK (TO-252) RoHS: Compliant	2880	2000:$0.2571 2880:$0.2400
IRFR9120NTRPBF DISTI # XSFP00000152610	Infineon Technologies AG	PowerField-EffectTransistor,6.6AI(D),100V,0.48ohm,1-Element,P-Channel,Silicon,Metal-oxideSemiconductorFET,TO-252AA RoHS: Compliant	17498	2000:$0.5500 17498:$0.5000
IRFR9120NTRPBF DISTI # 2101422	Infineon Technologies AG	MOSFET, P CH, 100V, 6.6A, D-PAK RoHS: Compliant	4827	5:£0.4730 25:£0.3930 100:£0.3130 250:£0.2780 500:£0.2420
IRFR9120NTRPBF	Infineon Technologies AG	-100V,480m,-6.6A,P-Ch Power MOSFET	1600	1:$0.4700 100:$0.4000 500:$0.3500 1000:$0.3400
IRFR9120NTRPBF DISTI # 2101422	Infineon Technologies AG	MOSFET, P CH, 100V, 6.6A, D-PAK RoHS: Compliant	4747	1:$1.2100 10:$0.9960 100:$0.6430 1000:$0.5150 2000:$0.4340 10000:$0.4180 24000:$0.4030

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IRFR9120NTRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes