BSZ097N10NS5ATMA1

Mfr. #:: BSZ097N10NS5ATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 100V 40A TSDSON-8
Lifecycle:: New from this manufacturer.
Datasheet:: BSZ097N10NS5ATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: BSZ097N10NS5ATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TSDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 40 A

Rds On - Drain-Source Resistance:: 8.3 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 28 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 69 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.1 mm

Length:: 3.3 mm

Series:: OptiMOS 5

Transistor Type:: 1 N-Channel

Width:: 3.3 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 23 S

Fall Time:: 5 ns

Product Type:: MOSFET

Rise Time:: 5 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 21 ns

Typical Turn-On Delay Time:: 11 ns

Part # Aliases:: BSZ097N10NS5 SP001132550

Unit Weight:: 0.001295 oz

Tags: BSZ097N10NS5A, BSZ097N1, BSZ097, BSZ09, BSZ0, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSZ097N10NS5ATMA1 Ratings and Reviews

R***r

Product arrived fast very good. Great seller.

2019-05-18

D***v

Went for a very long time 3 months 2 boards working 1 when connecting suffocated can my cant prodovets recommend

2019-05-03

L***v

Ultrafast delivery, great quality. Awesome packing skills:D Thank you!

2019-03-24

BSZ097N10NS5ATMA1 Description

***ure Electronics: BSZ097xx Series 100 V 40 A 9.7 mOhm OptiMOS5 Power-MOSFET - TSDSON-8 FL

***ment14 APAC: MOSFET, N-CH, 100V, 40A, TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Source Voltage Vds:100V; On Resistance

***nell: MOSFET, N-CH, 100V, 40A, TSDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0083ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 69W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***Yang: Trans MOSFET N-CH 80V 40A 8-Pin TSDSON T/R - Product that comes on tape, but is not reeled

***ure Electronics: Single N-Channel 80 V 7.5 mOhm 24 nC OptiMOS Power Mosfet - TSDSON-8 FL

***ment14 APAC: MOSFET, N-CH, 80V, 40A, TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Source Voltage Vds:80V; On Resistance

***ineon SCT: Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in S3O8 package, PG-TSDSON-8, RoHS

***ark: MOSFET, N-CH, 80V, 40A, 150DEG C, 69W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 80V, 40A, TSDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0062ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 69W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***emi: N-Channel Shielded Gate PowerTrench® MOSFET 100V, 81A, 8mΩ

***el Electronic: In a Pack of 3, N-Channel MOSFET, 49 A, 100 V, 8-Pin Power 56 ON Semiconductor FDMS86103L

***ure Electronics: FDMS86103L Series 100 V 81 A 8 mOhm N-Ch PowerTrench® MOSFET - Power56

*** Stop Electro: Power Field-Effect Transistor, 12A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***nell: MOSFET, N CH, 100V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0064ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***Yang: Trans MOSFET N-CH 80(Min)V 50A 7-Pin WDSON T/R - Tape and Reel

***ponent Sense: MOSFET N-CH 80V 50A OPTIMOS MP PACKAGE 1

***ineon SCT: OptiMOS™ is the market leader in highly efficient solutions for power generation (e, MG-WDSON-2, RoHS

***i-Key: MOSFET N-CH 80V 13A/50A 2WDSON

***ineon: OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control

***ical: Trans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R

***ark: MOSFET, N-CH, 80V, 40A, TSDSON; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Qualification:-RoHS Compliant: Yes

***ineon SCT: Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in S3O8 package, PG-TSDSON-8, RoHS

***nell: MOSFET, N-CH, 80V, 40A, TSDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0071ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 63W; Transistor Case Style: TSDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***ure Electronics: N-Channel 100 V 8.9 mOhm 125 W SMT ThunderFET Power Mosfet - TO-263

***ical: Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) D2PAK

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 50A I(D), 100V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: Mosfet, N-Ch, 100V, 29.5A, Soic Rohs Compliant: Yes

***des Inc SCT: 100V N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS

***ical: Trans MOSFET N-CH 100V 11.5A 8-Pin SO T/R

***et: MOSFET BVDSS: 61V~100V SO-8 T&R 2.5K

BSZ097N10NS5ATMA1 More Information

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Market price

Part #	Mfg.	Description	Stock	Price
BSZ097N10NS5ATMA1 DISTI # BSZ097N10NS5ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3774In Stock	1000:$0.8199 500:$0.9896 100:$1.2723 10:$1.5830 1:$1.7500
BSZ097N10NS5ATMA1 DISTI # BSZ097N10NS5ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3774In Stock	1000:$0.8199 500:$0.9896 100:$1.2723 10:$1.5830 1:$1.7500
BSZ097N10NS5ATMA1 DISTI # BSZ097N10NS5ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 40A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.7302
BSZ097N10NS5ATMA1 DISTI # BSZ097N10NS5ATMA1	Infineon Technologies AG	MOSFET N-CH 100V 40A TSDSON-8 - Tape and Reel (Alt: BSZ097N10NS5ATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.6499 10000:$0.6479 20000:$0.6469 30000:$0.6449 50000:$0.6439
BSZ097N10NS5ATMA1 DISTI # 13AC8353	Infineon Technologies AG	MOSFET, N-CH, 100V, 40A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	619	1000:$0.7490 500:$0.9490 250:$1.0100 100:$1.0800 50:$1.1900 25:$1.2900 10:$1.4000 1:$1.6400
BSZ097N10NS5ATMA1 DISTI # 726-BSZ097N10NS5ATMA	Infineon Technologies AG	MOSFET N-Ch 100V 40A TSDSON-8 RoHS: Compliant	3270	1:$1.6400 10:$1.4000 100:$1.0800 500:$0.9490 1000:$0.7490 5000:$0.6640
BSZ097N10NS5 DISTI # 726-BSZ097N10NS5	Infineon Technologies AG	MOSFET N-Ch 100V 40A TSDSON-8 RoHS: Compliant	6821	1:$1.6400 10:$1.4000 100:$1.0800 500:$0.9490 1000:$0.7490 5000:$0.6640
BSZ097N10NS5ATMA1 DISTI # 1702300	Infineon Technologies AG	MOSFET N-CH 100V 40A OPTIMOS5 TSDSON8 FL, RL	4960	5000:£0.4960 10000:£0.4920
BSZ097N10NS5ATMA1 DISTI # 2725825	Infineon Technologies AG	MOSFET, N-CH, 100V, 40A, TSDSON RoHS: Compliant	419	1000:$1.3100 500:$1.5800 100:$2.0300 10:$2.5300 1:$2.8000
BSZ097N10NS5ATMA1 DISTI # 2725825	Infineon Technologies AG	MOSFET, N-CH, 100V, 40A, TSDSON RoHS: Compliant	409	500:£0.7300 250:£0.7820 100:£0.8330 25:£0.9320 5:£1.0300

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