BSZ097N1

BSZ097N10NS5 vs BSZ097N10NS5ATMA1 vs BSZ097N10NS5ATMA

 
PartNumberBSZ097N10NS5BSZ097N10NS5ATMA1BSZ097N10NS5ATMA
DescriptionMOSFET N-Ch 100V 40A TSDSON-8MOSFET N-Ch 100V 40A TSDSON-8
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-TSDSON-8TSDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current40 A40 A-
Rds On Drain Source Resistance13 mOhms8.3 mOhms-
Vgs th Gate Source Threshold Voltage2.2 V2.2 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge22 nC28 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation69 W69 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length3.3 mm3.3 mm-
SeriesOptiMOS 5OptiMOS 5-
Transistor Type1 N-Channel1 N-Channel-
Width3.3 mm3.3 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min23 S23 S-
Fall Time5 ns5 ns-
Product TypeMOSFETMOSFET-
Rise Time5 ns5 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time21 ns21 ns-
Typical Turn On Delay Time11 ns11 ns-
Part # AliasesBSZ097N10NS5ATMA1 SP001132550BSZ097N10NS5 SP001132550-
Unit Weight0.001295 oz0.001295 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSZ097N10NS5 MOSFET N-Ch 100V 40A TSDSON-8
BSZ097N10NS5ATMA1 MOSFET N-Ch 100V 40A TSDSON-8
BSZ097N10NS5ATMA1 RF Bipolar Transistors MOSFET N-Ch 100V 40A TSDSON-8
BSZ097N10NS5 Trans MOSFET N-CH 100V 40A 8-Pin TSDSON EP T/R
BSZ097N10NS5ATMA New and Original
BSZ097N10NS5ATMA1-CUT TAPE New and Original
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