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IKW30N65NL5XKSA1

IKW30N65NL5XKSA1
Mfr. #:
IKW30N65NL5XKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 650V IGBT Trenchstop 5
Lifecycle:
New from this manufacturer.
Datasheet:
IKW30N65NL5XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IKW30N65NL5XKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.05 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
85 A
Pd - Power Dissipation:
227 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 175 C
Series:
TRENCHSTOP 5 L5
Packaging:
Tube
Brand:
Infineon Technologies
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
240
Subcategory:
IGBTs
Tradename:
TRENCHSTOP
Part # Aliases:
IKW30N65NL5 SP001174466
Tags
IKW30N65, IKW30N6, IKW30N, IKW3, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs
Infineon TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs are at the other end of the switching frequency range, and are optimized to deliver outstanding performance in designs switching <10kHz. Infineon's L5 have been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. The L5 offer a low VCE(sat) of 1.05V for 30A IGBTs, lowest switching losses in reactive power mode, at cos φ <1 and high thermal stability of electrical parameters. A new efficiency level is reachable with the 1.05V VCE(sat) TRENCHSTOP™ 5 L5 for low speed switching devices.
Part # Mfg. Description Stock Price
IKW30N65NL5XKSA1
DISTI # V99:2348_06378702		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		218
  • 500:$3.3100
  • 250:$3.7330
  • 100:$3.9670
  • 10:$4.6000
  • 1:$6.0038
IKW30N65NL5XKSA1
DISTI # IKW30N65NL5XKSA1IN-ND		Infineon Technologies AGIGBT 650V 30A UFAST DIO TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$4.2523
IKW30N65NL5XKSA1
DISTI # 27492280		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		218
  • 500:$3.3100
  • 250:$3.7330
  • 100:$3.9630
  • 10:$4.6000
  • 3:$5.4580
IKW30N65NL5XKSA1
DISTI # IKW30N65NL5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube - Bulk (Alt: IKW30N65NL5XKSA1)
RoHS: Compliant
Min Qty: 140
Container: Bulk		Americas - 0
  • 1400:$2.1900
  • 420:$2.2900
  • 700:$2.2900
  • 280:$2.3900
  • 140:$2.4900
IKW30N65NL5XKSA1
DISTI # IKW30N65NL5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW30N65NL5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$2.5900
  • 2400:$2.5900
  • 960:$2.6900
  • 480:$2.7900
  • 240:$2.8900
IKW30N65NL5XKSA1
DISTI # SP001174466		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube (Alt: SP001174466)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.1900
  • 50:€2.2900
  • 100:€2.2900
  • 500:€2.2900
  • 10:€2.4900
  • 25:€2.4900
  • 1:€2.5900
IKW30N65NL5XKSA1
DISTI # 34AC1631		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247,DC Collector Current:85A,Collector Emitter Saturation Voltage Vce(on):1.05V,Power Dissipation Pd:227W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes159
  • 500:$3.4700
  • 250:$3.8800
  • 100:$4.0900
  • 50:$4.3000
  • 25:$4.5100
  • 10:$4.7200
  • 1:$5.5400
IKW30N65NL5XKSA1
DISTI # 726-IKW30N65NL5XKSA1		Infineon Technologies AGIGBT Transistors 650V IGBT Trenchstop 5
RoHS: Compliant		2519
  • 1:$5.4900
  • 10:$4.6700
  • 100:$4.0500
  • 250:$3.8400
  • 500:$3.4400
IKW30N65NL5XKSA1Infineon Technologies AG 
RoHS: Not Compliant		70
  • 1000:$2.3600
  • 500:$2.4800
  • 100:$2.5800
  • 25:$2.6900
  • 1:$2.9000
IKW30N65NL5XKSA1
DISTI # 2781031		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247
RoHS: Compliant		159
  • 1000:$3.8200
  • 500:$4.0000
  • 250:$4.2200
  • 100:$4.4500
  • 10:$5.0400
  • 1:$5.3900
IKW30N65NL5XKSA1
DISTI # 2781031		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247159
  • 100:£3.4500
  • 10:£3.9800
  • 1:£5.1900
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 IGBT TRENCH 650V 40A TO247
Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of IKW30N65NL5XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$5.49
$5.49
10
$4.67
$46.70
100
$4.05
$405.00
250
$3.84
$960.00
500
$3.44
$1 720.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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