IHW25N120E1XKSA1

Mfr. #:: IHW25N120E1XKSA1
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors IGBT PRODUCTS
Lifecycle:: New from this manufacturer.
Datasheet:: IHW25N120E1XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 1.2 kV

Collector-Emitter Saturation Voltage:: 1.5 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 50 A

Pd - Power Dissipation:: 231 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Packaging:: Tube

Continuous Collector Current Ic Max:: 50 A

Brand:: Infineon Technologies

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 240

Subcategory:: IGBTs

Part # Aliases:: IHW25N120E1 SP001391910

Unit Weight:: 0.211644 oz

Tags: IHW25N120E, IHW25N, IHW25, IHW2, IHW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IHW25N120E1XKSA1 Description

***ical: Trans IGBT Chip N-CH 1200V 50A 231000mW 3-Pin(3+Tab) TO-247 Tube

***ark: Igbt, Single, 1.2Kv, 50A, To-247; Dc Collector Current:50A; Collector Emitter Saturation Voltage Vce(On):1.5V; Power Dissipation Pd:231W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon: The new RC-E IGBTs are cost- and feature-optimized specifically for low- to mid-range induction cookers and other resonant applications. The RC-E technology uses an IGBT with monolithically integrated reverse conduction diode to set the new benchmark for price/performance and ease-of-use in the industry. This new family offers Infineons proven quality in RC IGBTs and meets all the needs of so switching applications, including attractive pricing compared to other general purpose IGBTs. | Summary of Features: Low E off and V ce(sat); Designed for so switching applications; Optimized for performance with switching frequencies from 18kHz40kHz; Most commonly used blocking voltage, 1200V | Benefits: Price versus performance leader for cost-e ective designs; Low losses help designs meet energy efficiency standards; Drop-in replacement for existing designs; Soft switching for good EMI behavior | Target Applications: Low- to mid-range induction cookers

Market price

Part #	Mfg.	Description	Stock	Price
IHW25N120E1XKSA1 DISTI # V99:2348_16563132	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube	239	500:$2.4840 250:$2.6890 100:$2.9190 10:$3.3630 1:$4.3483
IHW25N120E1XKSA1 DISTI # V36:1790_16563132	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube	0	240000:$1.7530 120000:$1.7570 24000:$2.4100 2400:$3.7460 240:$3.9800
IHW25N120E1XKSA1 DISTI # IHW25N120E1XKSA1-ND	Infineon Technologies AG	IGBT NPT/TRENCH 1200V 50A TO247 RoHS: Compliant Min Qty: 1 Container: Tube	155In Stock	2640:$2.1064 720:$2.6225 240:$3.0807 25:$3.5548 10:$3.7600 1:$4.1900
IHW25N120E1XKSA1 DISTI # 31691675	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube	239	3:$4.3483
IHW25N120E1XKSA1 DISTI # IHW25N120E1XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 1200V 50A 3 TO-247 Tube - Rail/Tube (Alt: IHW25N120E1XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	1440:$1.8900 2400:$1.8900 480:$1.9900 960:$1.9900 240:$2.0900
IHW25N120E1XKSA1 DISTI # SP001391910	Infineon Technologies AG	Trans IGBT Chip N-CH 1200V 50A 3 TO-247 Tube (Alt: SP001391910) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€1.4900 500:€1.5900 100:€1.6900 25:€1.7900 50:€1.7900 10:€1.8900 1:€2.0900
IHW25N120E1XKSA1 DISTI # 34AC1619	Infineon Technologies AG	IGBT, SINGLE, 1.2KV, 50A, TO-247,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:231W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes	2146	500:$2.5100 250:$2.8100 100:$2.9600 50:$3.1100 25:$3.2600 10:$3.4100 1:$4.0200
IHW25N120E1XKSA1 DISTI # 726-IHW25N120E1XKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS RoHS: Compliant	2304	1:$3.9800 10:$3.3800 100:$2.9300 250:$2.7800 500:$2.4900
IHW25N120E1XKSA1 DISTI # 2781025	Infineon Technologies AG	IGBT, SINGLE, 1.2KV, 50A, TO-247 RoHS: Compliant	2146	100:$3.2400 10:$3.6500 1:$3.9100
IHW25N120E1XKSA1 DISTI # 2781025	Infineon Technologies AG	IGBT, SINGLE, 1.2KV, 50A, TO-247	2146	500:£1.9400 250:£2.1600 100:£2.2800 10:£2.6400 1:£3.4600

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Availability

Stock:: Available
On Order:: 1985
Enter Quantity:

Current price of IHW25N120E1XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$3.98~~; ~~$3.98~~

10: ~~$3.38~~; ~~$33.80~~

100: ~~$2.93~~; ~~$293.00~~

250: ~~$2.78~~; ~~$695.00~~

500: ~~$2.49~~; ~~$1 245.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IHW25N120E1XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes