1200 V RC-E Reverse Conducting IGBT

By Infineon Technologies 121

1200 V RC-E Reverse Conducting IGBT

Infineon's RC-E series IGBTs are built on a long tradition of application-specific technologies. They are cost optimized and full featured specifically for soft switching applications. The RC-E technology uses an IGBT with monolithically integrated reverse conduction diode to set the benchmark for price and performance and ease-of-use. This family offers Infineon’s proven quality in RC IGBTs and meets all the needs of soft switching applications. The RC-E series is a powerful monolithic body diode with low forward voltage. They include the TRENCHSTOPTM technology, which offers a very tight parameter distribution, high ruggedness, temperature stable behavior, a low VCE(SAT), and an easy parallel switching capability due to positive coefficient in VCE(SAT).

Features and Benefits
  • Low Eoff and VCE(SAT)
  • Designed for soft switching applications
  • Optimized for performance with switching frequencies from 18 kHz to 40 kHz
  • Most commonly used blocking voltage:1200 V
  • Low losses help designs meet energy efficiency standards
  • Drop-in replacement for existing designs
  • Soft switching for good EMI behavior

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