Manufacturer
Wolfspeed
  • C3D Silicon Carbide Schottky Diode

    Wolfspeed presents the Z-Rec™ 1,700 V junction barrier Schottky (JBS) diode products. Leveraging silicon carbide’s unique advantages over silicon.

    By Wolfspeed
  • 650 V Z-REC™ SiC Schottky Diode

    Wolfspeed's 650 V, 4 A, 6 A, 8 A, and 10 A silicon carbide Schottky diodes is added to its world class Z-Rec™ Schottky diode product line.

    By Wolfspeed
  • 600 V Z-REC™ Rectifier

    Wolfspeed's Z-REC rectifier boasts a small package and zero reverse-recovery energy.

    By Wolfspeed
  • Silicon Carbide Power MOSFETs

    Silicon Carbide Power MOSFETs

    By Wolfspeed
  • CMPA1D1E025F Ku-Band Satellite Communications Tran

    Wolfspeed’s CMPA1D1E025F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

    By Wolfspeed
  • SpeedFit™ Online Simulator

    Wolfspeed's SpeedFit is a free and powerful online circuit simulation tool that is 100% dedicated to simulating and evaluating the performance of SiC power devices.

    By Wolfspeed
  • CGHV14800F L-Band GaN HEMT

    Wolfspeed’s CGHV14800 is a GaN high-electron mobility transistor (HEMT) designed specifically with high-efficiency, high-gain, and wide-bandwidth capabilities.

    By Wolfspeed
  • CGHV59070 C-Band GaN HEMT

    Wolfspeed's CGHV59070, operating from a 50 V rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

    By Wolfspeed
  • CGHV27060MP GaN HEMT

    Wolfspeed’s CGHV27060MP is a 60 W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small (4.4 mm x 6.5 mm) plastic SMT package.

    By Wolfspeed
  • CGHV40180F GaN HEMT

    Wolfspeed’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

    By Wolfspeed
  • CG2H40010 GaN HEMT

    Wolfspeed's CG2H40010 gallium nitride (GaN) high electron mobility transistor (HEMT) is available in a screw-down, flange package.

    By Wolfspeed
  • CG2H40045 RF Power GaN HEMT

    Cree Wolfspeed's CG2H40045 RF Power GaN HEMT offers a general purpose, broadband solution to a variety of RF and microwave applications.

    By Wolfspeed
  • CGHV40050F 50 V GaN Transistor

    Wolfspeed’s CGHV40050 operates from a 50 V rail and offers a general-purpose, broadband solution to a variety of RF and microwave applications.

    By Wolfspeed
  • CGH27015 Gallium-Nitride (GaN) High-Electron-Mobil

    Wolfspeed's CGH27015 GaN HEMT is designed for high-efficiency, high-gain, and wide bandwidth capabilities in amplifier applications.

    By Wolfspeed
  • C3M0065090J 900 V SiC MOSFET

    Wolfspeed’s C3M0065090J 900 V MOSFET enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

    By Wolfspeed
  • G5 Z-Rec® SiC Schottky Diodes

    Cree Wolfspeed's C5D 1700 V Z-Rec® Schottky diode products were designed to help improve system efficiency.

    By Wolfspeed
  • C3M™ Planar MOSFET Technology

    Wolfspeed’s advanced SiC MOSFET technology is offered in low-inductance discrete packing, allowing engineers to take advantage of C3M™ planar MOSFET chips.

    By Wolfspeed
  • E-Series Automotive SiC MOSFETs

    Wolfspeed's automotive-qualified, PPAP-capable, and humidity-resistant MOSFET offers low switching losses and high figure of merit.

    By Wolfspeed
  • CGHV40030F Gallium-Nitride High-Electron-Mobility

    Wolfspeed’s CGHV40030 GaN high-electron-mobility transistor is designed specifically for high-efficiency, high gain, and wide bandwidth capabilities.

    By Wolfspeed
  • CG2H40025 Gallium-Nitride High-Electron-Mobility T

    Wolfspeed’s CG2H40025 GaN high-electron-mobility transistor offers a general purpose broadband solution for a variety of RF and microwave applications.

    By Wolfspeed