Designed to provide design engineers with information on how to design more efficient power conversion systems.
EPC’s development boards are in a monolithic half- bridge topology with on-board gate drives, featuring the EPC2100/1/5 eGaNICs (Enhancement-mode Galium Nitride Integrated Circuit).
Despite its small size, the EPC9118 demonstration board has peak power efficiency greater than 93%, capable of delivering 20 A at 5 V with a 36 V input.
The power block of the Efficient Power Conversion EPC9106 including eGaN FETs, driver, inductor and input/output caps is an ultra-compact 2.1 x 1.6 mm layout.
The first in a new family of "Relaxed Pitch" devices, the EPC2029 80 V, 31 A eGaN FET from EPC features a 1 mm ball pitch.
EPC's development board contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive
EPC announces the extension of the eGaN power transistor portfolio with high-performance, wider-pitch, chip-scale packages for ease of high volume manufacturing and enhanced compatibility with mat
The EPC9115 Demonstration Board is a fully regulated, 300 kHz isolated, DC/DC bus converter with a 12 V, 42 A output and an input range of 48 to 60 V.
EPC announce the extension of GaN power transistor portfolio with two eGaN FETs that raise the bar for power conversion performance.
EPC's GaN FET book WiPo 2nd Edition is a supplement to GaN transistors for efficient power conversion.
EPC's GaN-based differential mode development boards that can operate up to 30 MHz.
EPC's EPC9065 is a high efficiency, Zero Voltage Switching (ZVS) differential mode Class-D amplifier development board that operates at, but is not limited to, 6.78 MHz (lowest ISM band).
EPC's GaN today is facing a period of extremely rapid growth because semiconductors using this material give companies a major performance and cost advantage.
EPC’s latest generation eGaN technology cuts the size of their devices in half, but triples their performance.
EPC’s EPC9130 demonstration board features a power density exceeding 1000 W per cubic inch, and over 96% efficiency.
EPC's demonstration board EPC9131 is easy to set up to evaluate the performance of the EPC2112 eGaN® IC and directly driven from the controller IC.
EPC's EPC9204 development board provides an eGaN IC based power module, featuring the EPC2111 eGaN® IC (enhancement-mode gallium nitride integrated circuit).
EPC's EPC9205 GaN power module is designed for plug-and-play evaluation of the high performance gained with gallium nitride power integrated circuits.
EPC's EPC2112/EPC2115 eGaN® ICs combine gate drivers with high-frequency GaN FETs for improved efficiency, reduced size, and lower cost.
EPC's EPC2050 is just 1.95 mm x 1.95 mm (3.72 mm2), giving designers high performance in a small size package.
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