These IGBTs retain a positive temperature coefficient of its collector to emitter saturation voltage for ease of parallel configuration.
Features lower gate-to-drain charge and lower gate resistance, thus reducing switching losses with faster switching, and lowering gate drive power consumption.
Designed to minimize conduction and switching losses in hard-switching applications.
IXYS/Littelfuse Linear L2™ MOSFETs are a distinguished class of rugged Power MOSFETs tailored specifically for applications that require Power MOSFETs to operate in their current saturation region
Promotes device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications.
IXYS/Littelfuse has combined the latest silicon carbide diode technology with its advanced GenX3™ IGBT platform, enabling critical applications like switch mode power supplies.
Allows for the development of more efficient power subsystems in applications such as high frequency inverters in power conversion and solar energy generation.
Provides improved power efficiency and reliability for demanding high-voltage conversion systems that require bus voltage operation of up to 700 V.
Available with blocking voltages between 500 V to 1000 V, on-resistance (Rdson) as low as 500 mΩ (max), and drain current ratings of up to 6 A.
Tailored to address market demands for highly rugged, low loss semiconductor devices that offer the ability to be easily configured in parallel.
PolarP3™ power MOSFETs feature low on-state resistance (Rdson) and gate charge (Qg). Available in two voltage grades of 500 V and 600 V grade.
Provides designers with the ability to reduce or eliminate multiple paralleled lower current rated MOSFET devices in high power switching applications.
The IXYS/Littelfuse DT-Triac™ is designed for line-frequency applications and three-quadrant operation, namely quadrants I to III.
IXYS Corporation (IXYS), a global manufacturer of power semiconductors and ICs for energy efficiency, power management, transportation, medical, and motor control applications, features a 10 A / 4
IXYS Corporation/Littelfuse's HiPerFET™ power MOSFETs are 200 V ultra-junction X3-class featuring low on-resistance and ultra-low gate charge.
IXYS introduces their power semiconductor product line: 300 V ultra-junction X3-class HiPerFET™ power MOSFETs.
The 1000 V Ultra-Junction X-Class HiPerFET Power MOSFETs from IXYS LLC, now part of Littelfuse, are optimized for soft-switching power conversion applications.
IXYS' power semiconductor device developed using a charge compensation principle and proprietary process technology significantly reduces resistance RDS(ON).
Suitable for industrial applications, portable instrumentation, portable battery powered tools, and portable medical devices.
Features high blocking voltage, proprietary high voltage ISOPLUS™, up to 4500 V electrical isolation (DCB), and UL 94 V-0 flammability qualified.