IXYS Corporation/Littelfuse's family of 170 V to 300 V GigaMOS Power MOSFETs offer high current capabilities of up to 260 amperes. Available in compact housing packages, these power MOSFETs give design engineers the capability to control more power within a smaller footprint. They also provide designers with the ability to reduce or eliminate multiple paralleled lower current rated MOSFET devices in high power switching applications. The resulting effect is a reduction in part count as well as the number of required drive components, improving over-all system reliability and cost. These power MOSFETs are optimized for superior switching performance in a broad range of high power switching applications.

• High current capability (up to 260 A)
• Low Rds(on) and gate charge (Qg)
• Incorporates IXYS HiPerFET™ technology for fast power switching performance
• Avalanche capabilities
• Eliminates multiple paralleled lower current rated MOSFETs devices
• Improves overall system reliability and cost
• Capability to switch more power within a smaller footprint

• High-speed power switching applications
• DC to DC converters
• Battery chargers
• Switch/resonant mode power supplies
• DC choppers
• AC motor drives
• Uninterruptible power supplies