GeneSiC Semiconductor

Silicon Carbide Transistor advantages include low switching losses, higher efficiency, high temperature operation and high short circuit withstand capability.

Features superior surge current capability, positive temperature coefficient of Vf, superior figure of merit Qc/If and much more.

GeneSiC is offering and continuously improving innovative Silicon Carbide power rectifiers for high voltage rating applications, with significant advantages.

Silicon Carbide Power Schottky Diode feature superior surge current capability and positive temperature coefficient of Vf.

MBR40044CT, 400 A Schottky diode features high surge capability and types up to 100 V VRRM.

MBR60040CT, 600 A silicon power schottky diode features high surge capability and types up to 100 V VRRM.

1N3214 features high surge capability and types up to 600 V VRRM.