Silicon Carbide Power Schottky Diodes

By GeneSiC Semiconductor 176

Silicon Carbide Power Schottky Diodes

GeneSiC Semiconductor introduces their Silicon Carbide Power Schottky diodes. This product promotes improved circuit efficiency (lower overall cost), low switching losses, ease of paralleling devices without thermal runaway, smaller heat sink requirements, low reverse recovery current, low device capacitance and low reverse leakage current at operating temperatures. The two products offer at 1200 V in a TO-252 package, and provide 2 A at 26 nC, as well as 5 A at 35 nC.

Features
  • 1200 V Schottky rectifier
  • 175°C maximum operating temperature
  • Temperature independent switching behavior
  • Superior surge current capability
  • Positive temperature coefficient of Vf
  • Extremely fast switching speeds
  • Superior figure of merit Qc/If
Applications
  • Power Factor Correction (PFC)
  • Switched-Mode Power Supply (SMPS)
  • Solar inverters
  • Wind turbine inverters
  • Motor drives
  • Induction heating
  • High voltage multipliers

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