Silicon Carbide Schottky Diode

By GeneSiC Semiconductor 146

Silicon Carbide Schottky Diode

GeneSiC Semiconductor introduces their Silicon Carbide Power Schottky diode. The advantage of these products is improved circuit efficiency (lower overall cost), low switching losses, ease of paralleling devices without thermal runaway, smaller heat sink requirements, low reverse recovery current, low device capacitance, and low reverse leakage current at operating temperature. At 1200 V, customers have a wide range of amperages and package sizes. These products are RoHS compliant.

Features
  • 1200 V Schottky rectifier
  • 175°C maximum operating temperature
  • Temperature independent switching behavior
  • Superior surge current capability
  • Positive temperature coefficient of Vf
  • Extremely fast switching speeds
  • Superior figure of merit Qc/If
Applications
  • Power factor correction (PFC)
  • Switched-mode power supply (SMPS)
  • Solar inverters
  • Wind turbine inverters
  • Motor drives
  • Induction heating
  • Uninterruptible power supply (UPS)
  • High voltage mulipliers

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