The IRF6718L2 features Infineon Technologies' latest generation of silicon technology in a large can DirectFET package to deliver extremely low RDS(ON) of only 0.5 mΩ (typical) at 10 V VGS in a 60% smaller footprint and an 85% lower profile than a D2PAK. This device significantly reduces conduction losses associated with the pass element in O-ring or hot swap applications and allows dual sided cooling to maximize thermal transfer in power systems to dramatically improve the efficiency of the entire system.
| Features |
|
|
- Ultra-low package inductance
- Very low RDS(ON) for reduced conduction losses
- Compatible with existing surface mount techniques
|
|
- Optimized for active O-ring / eFUSE applications
- Dual sided cooling compatible
|
| Applications |
|
|
- Infineon Technologies' first device hosted in a large can DirectFET package with significantly lower RDS(ON) than competing devices that achieves excellent efficiency and superior thermal performance for high density DC-DC applications such as servers in the smaller footprint than a D2PAK
|
|
- Board space and overall system cost can be reduced when compared to existing solutions as fewer parts are required for a given power loss
- Provides improved safe operating area (SOA) capability for eFUSE and hot swap circuits
|
